Fine-pitch wire ball bonding technology

Kohei Tatsumi, Kohzo Onoue, Tomohiro Uno, Osamu Kitamura

Research output: Contribution to journalArticle

Abstract

Advancing performance and diminishing size of semiconductors have increased the density of semiconductor packaging year by year. Wire bonding is in widespread use as technology for connecting semiconductor chip electrodes to external terminals. With development efforts expended to meet the higher packaging density requirements, wire bonding is now commercialized at a wire pitch of up to 90 μm. Wire bonding technology for a 50-μm wire pitch will be under development by the year 2000. This article presents the results of research conducted concerning the reduction in the diameter of the ball formed on the end of the wire, decrease in the tip radius of the capillary, and increase in Young's modulus of the wire. These study results verify the feasibility of wire bonding at pitches of 70 and 60 μm. The concept of wire bond reliability is also clarified.

Original languageEnglish
Pages (from-to)39-44
Number of pages6
JournalNippon Steel Technical Report
Issue number73
Publication statusPublished - 1997 Apr
Externally publishedYes

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Wire
Semiconductor materials
Packaging
Elastic moduli
Electrodes

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

Tatsumi, K., Onoue, K., Uno, T., & Kitamura, O. (1997). Fine-pitch wire ball bonding technology. Nippon Steel Technical Report, (73), 39-44.

Fine-pitch wire ball bonding technology. / Tatsumi, Kohei; Onoue, Kohzo; Uno, Tomohiro; Kitamura, Osamu.

In: Nippon Steel Technical Report, No. 73, 04.1997, p. 39-44.

Research output: Contribution to journalArticle

Tatsumi, K, Onoue, K, Uno, T & Kitamura, O 1997, 'Fine-pitch wire ball bonding technology', Nippon Steel Technical Report, no. 73, pp. 39-44.
Tatsumi K, Onoue K, Uno T, Kitamura O. Fine-pitch wire ball bonding technology. Nippon Steel Technical Report. 1997 Apr;(73):39-44.
Tatsumi, Kohei ; Onoue, Kohzo ; Uno, Tomohiro ; Kitamura, Osamu. / Fine-pitch wire ball bonding technology. In: Nippon Steel Technical Report. 1997 ; No. 73. pp. 39-44.
@article{8dc8700fc76643588ae814584964d34d,
title = "Fine-pitch wire ball bonding technology",
abstract = "Advancing performance and diminishing size of semiconductors have increased the density of semiconductor packaging year by year. Wire bonding is in widespread use as technology for connecting semiconductor chip electrodes to external terminals. With development efforts expended to meet the higher packaging density requirements, wire bonding is now commercialized at a wire pitch of up to 90 μm. Wire bonding technology for a 50-μm wire pitch will be under development by the year 2000. This article presents the results of research conducted concerning the reduction in the diameter of the ball formed on the end of the wire, decrease in the tip radius of the capillary, and increase in Young's modulus of the wire. These study results verify the feasibility of wire bonding at pitches of 70 and 60 μm. The concept of wire bond reliability is also clarified.",
author = "Kohei Tatsumi and Kohzo Onoue and Tomohiro Uno and Osamu Kitamura",
year = "1997",
month = "4",
language = "English",
pages = "39--44",
journal = "Nippon Steel Technical Report",
issn = "0300-306X",
publisher = "Nippon Steel Corporation",
number = "73",

}

TY - JOUR

T1 - Fine-pitch wire ball bonding technology

AU - Tatsumi, Kohei

AU - Onoue, Kohzo

AU - Uno, Tomohiro

AU - Kitamura, Osamu

PY - 1997/4

Y1 - 1997/4

N2 - Advancing performance and diminishing size of semiconductors have increased the density of semiconductor packaging year by year. Wire bonding is in widespread use as technology for connecting semiconductor chip electrodes to external terminals. With development efforts expended to meet the higher packaging density requirements, wire bonding is now commercialized at a wire pitch of up to 90 μm. Wire bonding technology for a 50-μm wire pitch will be under development by the year 2000. This article presents the results of research conducted concerning the reduction in the diameter of the ball formed on the end of the wire, decrease in the tip radius of the capillary, and increase in Young's modulus of the wire. These study results verify the feasibility of wire bonding at pitches of 70 and 60 μm. The concept of wire bond reliability is also clarified.

AB - Advancing performance and diminishing size of semiconductors have increased the density of semiconductor packaging year by year. Wire bonding is in widespread use as technology for connecting semiconductor chip electrodes to external terminals. With development efforts expended to meet the higher packaging density requirements, wire bonding is now commercialized at a wire pitch of up to 90 μm. Wire bonding technology for a 50-μm wire pitch will be under development by the year 2000. This article presents the results of research conducted concerning the reduction in the diameter of the ball formed on the end of the wire, decrease in the tip radius of the capillary, and increase in Young's modulus of the wire. These study results verify the feasibility of wire bonding at pitches of 70 and 60 μm. The concept of wire bond reliability is also clarified.

UR - http://www.scopus.com/inward/record.url?scp=4544339688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544339688&partnerID=8YFLogxK

M3 - Article

SP - 39

EP - 44

JO - Nippon Steel Technical Report

JF - Nippon Steel Technical Report

SN - 0300-306X

IS - 73

ER -