TY - JOUR
T1 - Fine structure analysis of Si KL2,3V Auger spectra of Si, SiC and SiO2
AU - Yamamoto, Tomoyuki
AU - Sato, Chikai
AU - Mogi, Masato
AU - Tanaka, Isao
AU - Adachi, Hirohiko
N1 - Funding Information:
The authors would like to thank Drs. Y. Shichi and Y. Inoue of NISSAN ARC LTD. for their fruitful discussions. This work was partially supported by the Computational Materials Science Unit in Kyoto University by the Japanese Ministry of Education, Culture, Sports, Science and Technology (MEXT).
PY - 2004/3
Y1 - 2004/3
N2 - High-resolution Si KL2,3V Auger spectra of Si, SiC and SiO 2 are measured to investigate changes in the electronic structure of the valence band in these materials. Significant differences between the lineshapes of these spectra are observed. First-principles electronic structure calculations are also carried out, which reproduce the lineshapes of the KL 2,3V Auger spectra of Si, SiC and SiO2 observed experimentally. The core-hole effects on the theoretical spectral lineshapes are also taken into account in the present calculations.
AB - High-resolution Si KL2,3V Auger spectra of Si, SiC and SiO 2 are measured to investigate changes in the electronic structure of the valence band in these materials. Significant differences between the lineshapes of these spectra are observed. First-principles electronic structure calculations are also carried out, which reproduce the lineshapes of the KL 2,3V Auger spectra of Si, SiC and SiO2 observed experimentally. The core-hole effects on the theoretical spectral lineshapes are also taken into account in the present calculations.
KW - Core-hole effect
KW - Electronic structure
KW - First-principles calculation
KW - KLV Auger spectrum
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U2 - 10.1016/j.elspec.2003.12.001
DO - 10.1016/j.elspec.2003.12.001
M3 - Article
AN - SCOPUS:1842471252
SN - 0368-2048
VL - 135
SP - 21
EP - 25
JO - Journal of Electron Spectroscopy and Related Phenomena
JF - Journal of Electron Spectroscopy and Related Phenomena
IS - 1
ER -