Fine structure in magnetospectrum of vertical quantum dot

Oleksiy B. Agafonov; Tomohiro Kita; Hideo Ohno; Rolf J. Haug

doi:10.1016/j.physe.2007.10.006

Fine structure in magnetospectrum of vertical quantum dot

Oleksiy B. Agafonov, Tomohiro Kita, Hideo Ohno, Rolf J. Haug

Research output: Contribution to journal › Article › peer-review

Abstract

The electronic transport properties of a gated vertical quantum dot fabricated of an asymmetrical InGaAs/AlGaAs double-barrier resonant tunneling heterostructure are studied experimentally. At a temperature of 15 mK, a series of small current peaks are observed far below the voltage of a main resonance peak. The voltage position of these peaks appeared to be strongly dependent on the presence of magnetic field oriented perpendicular to the plane of the barriers. The occurrence of the peaks is attributed to tunneling mechanisms involving inter-Landau-level resonant tunneling, longitudinal-optical (LO)-phonon-assisted tunneling and to electrostatic effects such as Coulomb blockade.

Original language	English
Pages (from-to)	1630-1632
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2007.10.006
Publication status	Published - 2008 Mar 1
Externally published	Yes

Keywords

Magnetospectrum
Semiconductor quantum dot

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Fine structure in magnetospectrum of vertical quantum dot",

abstract = "The electronic transport properties of a gated vertical quantum dot fabricated of an asymmetrical InGaAs/AlGaAs double-barrier resonant tunneling heterostructure are studied experimentally. At a temperature of 15 mK, a series of small current peaks are observed far below the voltage of a main resonance peak. The voltage position of these peaks appeared to be strongly dependent on the presence of magnetic field oriented perpendicular to the plane of the barriers. The occurrence of the peaks is attributed to tunneling mechanisms involving inter-Landau-level resonant tunneling, longitudinal-optical (LO)-phonon-assisted tunneling and to electrostatic effects such as Coulomb blockade.",

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T1 - Fine structure in magnetospectrum of vertical quantum dot

AU - Agafonov, Oleksiy B.

AU - Kita, Tomohiro

AU - Ohno, Hideo

AU - Haug, Rolf J.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - The electronic transport properties of a gated vertical quantum dot fabricated of an asymmetrical InGaAs/AlGaAs double-barrier resonant tunneling heterostructure are studied experimentally. At a temperature of 15 mK, a series of small current peaks are observed far below the voltage of a main resonance peak. The voltage position of these peaks appeared to be strongly dependent on the presence of magnetic field oriented perpendicular to the plane of the barriers. The occurrence of the peaks is attributed to tunneling mechanisms involving inter-Landau-level resonant tunneling, longitudinal-optical (LO)-phonon-assisted tunneling and to electrostatic effects such as Coulomb blockade.

AB - The electronic transport properties of a gated vertical quantum dot fabricated of an asymmetrical InGaAs/AlGaAs double-barrier resonant tunneling heterostructure are studied experimentally. At a temperature of 15 mK, a series of small current peaks are observed far below the voltage of a main resonance peak. The voltage position of these peaks appeared to be strongly dependent on the presence of magnetic field oriented perpendicular to the plane of the barriers. The occurrence of the peaks is attributed to tunneling mechanisms involving inter-Landau-level resonant tunneling, longitudinal-optical (LO)-phonon-assisted tunneling and to electrostatic effects such as Coulomb blockade.

KW - Magnetospectrum

KW - Semiconductor quantum dot

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