Fine structure in magnetospectrum of vertical quantum dot

Oleksiy B. Agafonov, Tomohiro Kita, Hideo Ohno, Rolf J. Haug

Research output: Contribution to journalArticle

Abstract

The electronic transport properties of a gated vertical quantum dot fabricated of an asymmetrical InGaAs/AlGaAs double-barrier resonant tunneling heterostructure are studied experimentally. At a temperature of 15 mK, a series of small current peaks are observed far below the voltage of a main resonance peak. The voltage position of these peaks appeared to be strongly dependent on the presence of magnetic field oriented perpendicular to the plane of the barriers. The occurrence of the peaks is attributed to tunneling mechanisms involving inter-Landau-level resonant tunneling, longitudinal-optical (LO)-phonon-assisted tunneling and to electrostatic effects such as Coulomb blockade.

Original languageEnglish
Pages (from-to)1630-1632
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
Publication statusPublished - 2008 Mar 1
Externally publishedYes

Keywords

  • Magnetospectrum
  • Semiconductor quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Fine structure in magnetospectrum of vertical quantum dot'. Together they form a unique fingerprint.

  • Cite this