First principles and macroscopic theories of semiconductor epitaxial growth

Kenji Shiraishi, Norihisa Oyama, Ko Okajima, Nori Miyagishima, Kyozaburo Takeda, Hiroshi Yamaguchi, Tomonori Ito, Takahisa Ohno

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.

    Original languageEnglish
    Pages (from-to)206-211
    Number of pages6
    JournalJournal of Crystal Growth
    Volume237-239
    Issue number1-4 I
    DOIs
    Publication statusPublished - 2002 Apr

    Fingerprint

    Semiconductor growth
    Epitaxial growth
    Scanning tunneling microscopy
    Dislocations (crystals)
    Semiconductor materials
    scanning tunneling microscopy

    Keywords

    • A1. Defects
    • A1. Growth models
    • A1. Stresses
    • A3. Molecular beam epitaxy

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Shiraishi, K., Oyama, N., Okajima, K., Miyagishima, N., Takeda, K., Yamaguchi, H., ... Ohno, T. (2002). First principles and macroscopic theories of semiconductor epitaxial growth. Journal of Crystal Growth, 237-239(1-4 I), 206-211. https://doi.org/10.1016/S0022-0248(01)01903-0

    First principles and macroscopic theories of semiconductor epitaxial growth. / Shiraishi, Kenji; Oyama, Norihisa; Okajima, Ko; Miyagishima, Nori; Takeda, Kyozaburo; Yamaguchi, Hiroshi; Ito, Tomonori; Ohno, Takahisa.

    In: Journal of Crystal Growth, Vol. 237-239, No. 1-4 I, 04.2002, p. 206-211.

    Research output: Contribution to journalArticle

    Shiraishi, K, Oyama, N, Okajima, K, Miyagishima, N, Takeda, K, Yamaguchi, H, Ito, T & Ohno, T 2002, 'First principles and macroscopic theories of semiconductor epitaxial growth', Journal of Crystal Growth, vol. 237-239, no. 1-4 I, pp. 206-211. https://doi.org/10.1016/S0022-0248(01)01903-0
    Shiraishi K, Oyama N, Okajima K, Miyagishima N, Takeda K, Yamaguchi H et al. First principles and macroscopic theories of semiconductor epitaxial growth. Journal of Crystal Growth. 2002 Apr;237-239(1-4 I):206-211. https://doi.org/10.1016/S0022-0248(01)01903-0
    Shiraishi, Kenji ; Oyama, Norihisa ; Okajima, Ko ; Miyagishima, Nori ; Takeda, Kyozaburo ; Yamaguchi, Hiroshi ; Ito, Tomonori ; Ohno, Takahisa. / First principles and macroscopic theories of semiconductor epitaxial growth. In: Journal of Crystal Growth. 2002 ; Vol. 237-239, No. 1-4 I. pp. 206-211.
    @article{ebc4e38ee8fe498387ee297568ec5e32,
    title = "First principles and macroscopic theories of semiconductor epitaxial growth",
    abstract = "We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.",
    keywords = "A1. Defects, A1. Growth models, A1. Stresses, A3. Molecular beam epitaxy",
    author = "Kenji Shiraishi and Norihisa Oyama and Ko Okajima and Nori Miyagishima and Kyozaburo Takeda and Hiroshi Yamaguchi and Tomonori Ito and Takahisa Ohno",
    year = "2002",
    month = "4",
    doi = "10.1016/S0022-0248(01)01903-0",
    language = "English",
    volume = "237-239",
    pages = "206--211",
    journal = "Journal of Crystal Growth",
    issn = "0022-0248",
    publisher = "Elsevier",
    number = "1-4 I",

    }

    TY - JOUR

    T1 - First principles and macroscopic theories of semiconductor epitaxial growth

    AU - Shiraishi, Kenji

    AU - Oyama, Norihisa

    AU - Okajima, Ko

    AU - Miyagishima, Nori

    AU - Takeda, Kyozaburo

    AU - Yamaguchi, Hiroshi

    AU - Ito, Tomonori

    AU - Ohno, Takahisa

    PY - 2002/4

    Y1 - 2002/4

    N2 - We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.

    AB - We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.

    KW - A1. Defects

    KW - A1. Growth models

    KW - A1. Stresses

    KW - A3. Molecular beam epitaxy

    UR - http://www.scopus.com/inward/record.url?scp=17344381039&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=17344381039&partnerID=8YFLogxK

    U2 - 10.1016/S0022-0248(01)01903-0

    DO - 10.1016/S0022-0248(01)01903-0

    M3 - Article

    VL - 237-239

    SP - 206

    EP - 211

    JO - Journal of Crystal Growth

    JF - Journal of Crystal Growth

    SN - 0022-0248

    IS - 1-4 I

    ER -