First principles and macroscopic theories of semiconductor epitaxial growth

Kenji Shiraishi, Norihisa Oyama, Ko Okajima, Nori Miyagishima, Kyozaburo Takeda, Hiroshi Yamaguchi, Tomonori Ito, Takahisa Ohno

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.

Original languageEnglish
Pages (from-to)206-211
Number of pages6
JournalJournal of Crystal Growth
Volume237-239
Issue number1 4 I
DOIs
Publication statusPublished - 2002 Apr

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Keywords

  • A1. Defects
  • A1. Growth models
  • A1. Stresses
  • A3. Molecular beam epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Shiraishi, K., Oyama, N., Okajima, K., Miyagishima, N., Takeda, K., Yamaguchi, H., Ito, T., & Ohno, T. (2002). First principles and macroscopic theories of semiconductor epitaxial growth. Journal of Crystal Growth, 237-239(1 4 I), 206-211. https://doi.org/10.1016/S0022-0248(01)01903-0