First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

Norihisa Oyama, Eiji Ohta, Kyozaburo Takeda, Kenji Shiraishi, Hiroshi Yamaguchi

    Research output: Contribution to journalArticle

    10 Citations (Scopus)

    Abstract

    The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.

    Original languageEnglish
    Pages (from-to)900-903
    Number of pages4
    JournalSurface Science
    Volume433
    DOIs
    Publication statusPublished - 1999 Aug 2

    Fingerprint

    Dislocations (crystals)
    Epitaxial growth
    Heterojunctions
    Epilayers
    Atoms
    indium arsenide
    gallium arsenide
    atoms

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Condensed Matter Physics
    • Surfaces and Interfaces

    Cite this

    First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy. / Oyama, Norihisa; Ohta, Eiji; Takeda, Kyozaburo; Shiraishi, Kenji; Yamaguchi, Hiroshi.

    In: Surface Science, Vol. 433, 02.08.1999, p. 900-903.

    Research output: Contribution to journalArticle

    Oyama, Norihisa ; Ohta, Eiji ; Takeda, Kyozaburo ; Shiraishi, Kenji ; Yamaguchi, Hiroshi. / First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy. In: Surface Science. 1999 ; Vol. 433. pp. 900-903.
    @article{1b76fb0661154ecaafc64c983d5fe7b8,
    title = "First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy",
    abstract = "The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.",
    author = "Norihisa Oyama and Eiji Ohta and Kyozaburo Takeda and Kenji Shiraishi and Hiroshi Yamaguchi",
    year = "1999",
    month = "8",
    day = "2",
    doi = "10.1016/S0039-6028(99)00524-5",
    language = "English",
    volume = "433",
    pages = "900--903",
    journal = "Surface Science",
    issn = "0039-6028",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

    AU - Oyama, Norihisa

    AU - Ohta, Eiji

    AU - Takeda, Kyozaburo

    AU - Shiraishi, Kenji

    AU - Yamaguchi, Hiroshi

    PY - 1999/8/2

    Y1 - 1999/8/2

    N2 - The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.

    AB - The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.

    UR - http://www.scopus.com/inward/record.url?scp=0033329446&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0033329446&partnerID=8YFLogxK

    U2 - 10.1016/S0039-6028(99)00524-5

    DO - 10.1016/S0039-6028(99)00524-5

    M3 - Article

    VL - 433

    SP - 900

    EP - 903

    JO - Surface Science

    JF - Surface Science

    SN - 0039-6028

    ER -