First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies

Norihisa Oyama, Eiji Ohta, Kyozaburo Takeda, Kenji Shiraishi, Hiroshi Yamaguchi

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.

    Original languageEnglish
    Pages (from-to)256-259
    Number of pages4
    JournalJournal of Crystal Growth
    Volume201
    DOIs
    Publication statusPublished - 1999 May

    Fingerprint

    Crystal atomic structure
    Epilayers
    Dislocations (crystals)
    atomic structure
    Electronic structure
    electronic structure
    Scanning tunneling microscopy
    Epitaxial growth
    scanning tunneling microscopy
    Atoms
    atoms
    gallium arsenide
    indium arsenide

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies. / Oyama, Norihisa; Ohta, Eiji; Takeda, Kyozaburo; Shiraishi, Kenji; Yamaguchi, Hiroshi.

    In: Journal of Crystal Growth, Vol. 201, 05.1999, p. 256-259.

    Research output: Contribution to journalArticle

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    abstract = "We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.",
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    AU - Ohta, Eiji

    AU - Takeda, Kyozaburo

    AU - Shiraishi, Kenji

    AU - Yamaguchi, Hiroshi

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