Flexible and stretchable thin-film transistors based on molybdenum disulphide

Jiang Pu, Lain Jong Li, Taishi Takenobu

    Research output: Contribution to journalArticle

    41 Citations (Scopus)

    Abstract

    The outstanding physical and chemical properties of two-dimensional materials, which include graphene and transition metal dichalcogenides, have allowed significant applications in next generation electronics. In particular, atomically thin molybdenum disulphide (MoS2) is attracting widespread attention because of its large bandgap, effective carrier mobility, and mechanical strength. In addition, recent developments in large-area high-quality sample preparation methods via chemical vapour deposition have enabled the use of MoS2 in novel functional applications, such as flexible and stretchable electronic devices. In this perspective, we focus on the current progress in generating MoS2-based flexible and stretchable thin-film transistors. The reported virtues and novelties of MoS2 provide significant advantages for future flexible and stretchable electronics. This journal is

    Original languageEnglish
    Pages (from-to)14996-15006
    Number of pages11
    JournalPhysical Chemistry Chemical Physics
    Volume16
    Issue number29
    DOIs
    Publication statusPublished - 2014 Aug 7

    Fingerprint

    molybdenum disulfides
    Thin film transistors
    Electronic equipment
    transistors
    Graphite
    Carrier mobility
    thin films
    electronics
    Chemical properties
    Strength of materials
    Transition metals
    Chemical vapor deposition
    Energy gap
    Physical properties
    carrier mobility
    chemical properties
    graphene
    physical properties
    transition metals
    vapor deposition

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Physics and Astronomy(all)

    Cite this

    Flexible and stretchable thin-film transistors based on molybdenum disulphide. / Pu, Jiang; Li, Lain Jong; Takenobu, Taishi.

    In: Physical Chemistry Chemical Physics, Vol. 16, No. 29, 07.08.2014, p. 14996-15006.

    Research output: Contribution to journalArticle

    Pu, Jiang ; Li, Lain Jong ; Takenobu, Taishi. / Flexible and stretchable thin-film transistors based on molybdenum disulphide. In: Physical Chemistry Chemical Physics. 2014 ; Vol. 16, No. 29. pp. 14996-15006.
    @article{51d231bc884844cf8cb1266df83a0190,
    title = "Flexible and stretchable thin-film transistors based on molybdenum disulphide",
    abstract = "The outstanding physical and chemical properties of two-dimensional materials, which include graphene and transition metal dichalcogenides, have allowed significant applications in next generation electronics. In particular, atomically thin molybdenum disulphide (MoS2) is attracting widespread attention because of its large bandgap, effective carrier mobility, and mechanical strength. In addition, recent developments in large-area high-quality sample preparation methods via chemical vapour deposition have enabled the use of MoS2 in novel functional applications, such as flexible and stretchable electronic devices. In this perspective, we focus on the current progress in generating MoS2-based flexible and stretchable thin-film transistors. The reported virtues and novelties of MoS2 provide significant advantages for future flexible and stretchable electronics. This journal is",
    author = "Jiang Pu and Li, {Lain Jong} and Taishi Takenobu",
    year = "2014",
    month = "8",
    day = "7",
    doi = "10.1039/c3cp55270e",
    language = "English",
    volume = "16",
    pages = "14996--15006",
    journal = "Physical Chemistry Chemical Physics",
    issn = "1463-9076",
    publisher = "Royal Society of Chemistry",
    number = "29",

    }

    TY - JOUR

    T1 - Flexible and stretchable thin-film transistors based on molybdenum disulphide

    AU - Pu, Jiang

    AU - Li, Lain Jong

    AU - Takenobu, Taishi

    PY - 2014/8/7

    Y1 - 2014/8/7

    N2 - The outstanding physical and chemical properties of two-dimensional materials, which include graphene and transition metal dichalcogenides, have allowed significant applications in next generation electronics. In particular, atomically thin molybdenum disulphide (MoS2) is attracting widespread attention because of its large bandgap, effective carrier mobility, and mechanical strength. In addition, recent developments in large-area high-quality sample preparation methods via chemical vapour deposition have enabled the use of MoS2 in novel functional applications, such as flexible and stretchable electronic devices. In this perspective, we focus on the current progress in generating MoS2-based flexible and stretchable thin-film transistors. The reported virtues and novelties of MoS2 provide significant advantages for future flexible and stretchable electronics. This journal is

    AB - The outstanding physical and chemical properties of two-dimensional materials, which include graphene and transition metal dichalcogenides, have allowed significant applications in next generation electronics. In particular, atomically thin molybdenum disulphide (MoS2) is attracting widespread attention because of its large bandgap, effective carrier mobility, and mechanical strength. In addition, recent developments in large-area high-quality sample preparation methods via chemical vapour deposition have enabled the use of MoS2 in novel functional applications, such as flexible and stretchable electronic devices. In this perspective, we focus on the current progress in generating MoS2-based flexible and stretchable thin-film transistors. The reported virtues and novelties of MoS2 provide significant advantages for future flexible and stretchable electronics. This journal is

    UR - http://www.scopus.com/inward/record.url?scp=84903754227&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84903754227&partnerID=8YFLogxK

    U2 - 10.1039/c3cp55270e

    DO - 10.1039/c3cp55270e

    M3 - Article

    AN - SCOPUS:84903754227

    VL - 16

    SP - 14996

    EP - 15006

    JO - Physical Chemistry Chemical Physics

    JF - Physical Chemistry Chemical Physics

    SN - 1463-9076

    IS - 29

    ER -