Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte

Saumya R. Mohapatra, T. Tsuruoka, T. Hasegawa, K. Terabe, M. Aono

Research output: Contribution to journalArticle

20 Citations (Scopus)


Resistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and in air, which is attributed to the formation and dissolution of a metal filament between the electrodes. From the standpoint of the switching mechanism, our cell can be referred to as a 'gapless-type atomic switch'. The cells also exhibited stable switching behavior under substrate bending. This device fabrication technique has great potential for flexible switch/memory applications.

Original languageEnglish
Article number022144
JournalAIP Advances
Issue number2
Publication statusPublished - 2012 Dec 1


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this