Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte

Saumya R. Mohapatra, T. Tsuruoka, Tsuyoshi Hasegawa, K. Terabe, M. Aono

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Resistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and in air, which is attributed to the formation and dissolution of a metal filament between the electrodes. From the standpoint of the switching mechanism, our cell can be referred to as a 'gapless-type atomic switch'. The cells also exhibited stable switching behavior under substrate bending. This device fabrication technique has great potential for flexible switch/memory applications.

Original languageEnglish
Article number022144
JournalAIP Advances
Volume2
Issue number2
DOIs
Publication statusPublished - 2012
Externally publishedYes

Fingerprint

printing
electrolytes
polymers
cells
electrodes
switches
metals
surface energy
filaments
dissolving
plastics
vacuum
fabrication
air

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte. / Mohapatra, Saumya R.; Tsuruoka, T.; Hasegawa, Tsuyoshi; Terabe, K.; Aono, M.

In: AIP Advances, Vol. 2, No. 2, 022144, 2012.

Research output: Contribution to journalArticle

Mohapatra, Saumya R. ; Tsuruoka, T. ; Hasegawa, Tsuyoshi ; Terabe, K. ; Aono, M. / Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte. In: AIP Advances. 2012 ; Vol. 2, No. 2.
@article{11bb20d0d7c3480ca94536c6b0ae7ef4,
title = "Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte",
abstract = "Resistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and in air, which is attributed to the formation and dissolution of a metal filament between the electrodes. From the standpoint of the switching mechanism, our cell can be referred to as a 'gapless-type atomic switch'. The cells also exhibited stable switching behavior under substrate bending. This device fabrication technique has great potential for flexible switch/memory applications.",
author = "Mohapatra, {Saumya R.} and T. Tsuruoka and Tsuyoshi Hasegawa and K. Terabe and M. Aono",
year = "2012",
doi = "10.1063/1.4727742",
language = "English",
volume = "2",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte

AU - Mohapatra, Saumya R.

AU - Tsuruoka, T.

AU - Hasegawa, Tsuyoshi

AU - Terabe, K.

AU - Aono, M.

PY - 2012

Y1 - 2012

N2 - Resistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and in air, which is attributed to the formation and dissolution of a metal filament between the electrodes. From the standpoint of the switching mechanism, our cell can be referred to as a 'gapless-type atomic switch'. The cells also exhibited stable switching behavior under substrate bending. This device fabrication technique has great potential for flexible switch/memory applications.

AB - Resistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and in air, which is attributed to the formation and dissolution of a metal filament between the electrodes. From the standpoint of the switching mechanism, our cell can be referred to as a 'gapless-type atomic switch'. The cells also exhibited stable switching behavior under substrate bending. This device fabrication technique has great potential for flexible switch/memory applications.

UR - http://www.scopus.com/inward/record.url?scp=84874065487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874065487&partnerID=8YFLogxK

U2 - 10.1063/1.4727742

DO - 10.1063/1.4727742

M3 - Article

AN - SCOPUS:84874065487

VL - 2

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 2

M1 - 022144

ER -