Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/λ Transmitter

Shigeru Kanazawa, Takeshi Fujisawa, Kiyoto Takahata, Toshio Ito, Yuta Ueda, Wataru Kobayashi, Hiroyuki Ishii, Hiroaki Sanjoh

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We have achieved the 100-Gb/s/λ operation of a flip-chip interconnection 1.3-μm lumped-electrode electroabsorption modulator integrated with a distributed feedback laser module for the first time. The flip-chip interconnection provides a flatter frequency response characteristic and a higher modulation bandwidth. Clear eye opening was achieved for 103-Gb/s nonreturn to zero and equalizer-free 56-GBd 4-pulse-amplitude modulation operation after a 10-km single-mode fiber transmission.

Original languageEnglish
Article number7113803
Pages (from-to)1699-1701
Number of pages3
JournalIEEE Photonics Technology Letters
Volume27
Issue number16
DOIs
Publication statusPublished - 2015 Aug 15
Externally publishedYes

Keywords

  • 100 Gb/s
  • Distributed feedback (DFB) laser
  • EADFB laser
  • electroabsorption modulator (EAM)
  • Ethernet
  • flip-chip interconnection
  • InGaAlAs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kanazawa, S., Fujisawa, T., Takahata, K., Ito, T., Ueda, Y., Kobayashi, W., Ishii, H., & Sanjoh, H. (2015). Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/λ Transmitter. IEEE Photonics Technology Letters, 27(16), 1699-1701. [7113803]. https://doi.org/10.1109/LPT.2015.2438076