Flip-Chip Interconnection Technique for beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter

Shigeru Kanazawa; Takeshi Fujisawa; Kiyoto Takahata; Yuta Ueda; Hiroyuki Ishii; Ryuzo Iga; Wataru Kobayashi; Hiroaki Sanjoh

doi:10.1109/JLT.2015.2462728

Flip-Chip Interconnection Technique for beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter

Shigeru Kanazawa, Takeshi Fujisawa, Kiyoto Takahata, Yuta Ueda, Hiroyuki Ishii, Ryuzo Iga, Wataru Kobayashi, Hiroaki Sanjoh

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We developed a flip-chip interconnection technique that is suitable for an EADFB laser array transmitter operating at more than 100 Gb/s (4 × 25 Gb/s). The flip-chip interconnection technique provides a good thermal flow comparable to that of the conventional wire interconnection technique but with a higher modulation bandwidth and lower electrical crosstalk. For a flip-chip interconnection 112-Gb/s (4 × 27.9 Gb/s) module, the OTU4 mask margin is only 4% worse for simultaneous four-channel operation than for single-channel operation. For a flip-chip interconnection 400-Gb/s (8 × 50 Gb/s) module, we obtained clear eye openings for all eight lanes with simultaneous eight-channel operation.

Original language	English
Article number	7173428
Pages (from-to)	296-302
Number of pages	7
Journal	Journal of Lightwave Technology
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/JLT.2015.2462728
Publication status	Published - 2016 Jan 15
Externally published	Yes

Keywords

100 gigabit Ethernet
400 gigabit Ethernet
Electro-absorption modulator
Flip-chip devices
Photonic integrated circuits
Semiconductor device packaging
Semiconductor laser arrays
Semiconductor lasers

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1109/JLT.2015.2462728

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title = "Flip-Chip Interconnection Technique for beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter",

abstract = "We developed a flip-chip interconnection technique that is suitable for an EADFB laser array transmitter operating at more than 100 Gb/s (4 × 25 Gb/s). The flip-chip interconnection technique provides a good thermal flow comparable to that of the conventional wire interconnection technique but with a higher modulation bandwidth and lower electrical crosstalk. For a flip-chip interconnection 112-Gb/s (4 × 27.9 Gb/s) module, the OTU4 mask margin is only 4% worse for simultaneous four-channel operation than for single-channel operation. For a flip-chip interconnection 400-Gb/s (8 × 50 Gb/s) module, we obtained clear eye openings for all eight lanes with simultaneous eight-channel operation.",

keywords = "100 gigabit Ethernet, 400 gigabit Ethernet, Electro-absorption modulator, Flip-chip devices, Photonic integrated circuits, Semiconductor device packaging, Semiconductor laser arrays, Semiconductor lasers",

author = "Shigeru Kanazawa and Takeshi Fujisawa and Kiyoto Takahata and Yuta Ueda and Hiroyuki Ishii and Ryuzo Iga and Wataru Kobayashi and Hiroaki Sanjoh",

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doi = "10.1109/JLT.2015.2462728",

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T1 - Flip-Chip Interconnection Technique for beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter

AU - Kanazawa, Shigeru

AU - Fujisawa, Takeshi

AU - Takahata, Kiyoto

AU - Ueda, Yuta

AU - Ishii, Hiroyuki

AU - Iga, Ryuzo

AU - Kobayashi, Wataru

AU - Sanjoh, Hiroaki

PY - 2016/1/15

Y1 - 2016/1/15

N2 - We developed a flip-chip interconnection technique that is suitable for an EADFB laser array transmitter operating at more than 100 Gb/s (4 × 25 Gb/s). The flip-chip interconnection technique provides a good thermal flow comparable to that of the conventional wire interconnection technique but with a higher modulation bandwidth and lower electrical crosstalk. For a flip-chip interconnection 112-Gb/s (4 × 27.9 Gb/s) module, the OTU4 mask margin is only 4% worse for simultaneous four-channel operation than for single-channel operation. For a flip-chip interconnection 400-Gb/s (8 × 50 Gb/s) module, we obtained clear eye openings for all eight lanes with simultaneous eight-channel operation.

AB - We developed a flip-chip interconnection technique that is suitable for an EADFB laser array transmitter operating at more than 100 Gb/s (4 × 25 Gb/s). The flip-chip interconnection technique provides a good thermal flow comparable to that of the conventional wire interconnection technique but with a higher modulation bandwidth and lower electrical crosstalk. For a flip-chip interconnection 112-Gb/s (4 × 27.9 Gb/s) module, the OTU4 mask margin is only 4% worse for simultaneous four-channel operation than for single-channel operation. For a flip-chip interconnection 400-Gb/s (8 × 50 Gb/s) module, we obtained clear eye openings for all eight lanes with simultaneous eight-channel operation.

KW - 100 gigabit Ethernet

KW - 400 gigabit Ethernet

KW - Electro-absorption modulator

KW - Flip-chip devices

KW - Photonic integrated circuits

KW - Semiconductor device packaging

KW - Semiconductor laser arrays

KW - Semiconductor lasers

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ER -

Flip-Chip Interconnection Technique for beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter

Abstract

Keywords

ASJC Scopus subject areas

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