Flip-Chip Interconnection Technique for beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter

Shigeru Kanazawa, Takeshi Fujisawa, Kiyoto Takahata, Yuta Ueda, Hiroyuki Ishii, Ryuzo Iga, Wataru Kobayashi, Hiroaki Sanjoh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We developed a flip-chip interconnection technique that is suitable for an EADFB laser array transmitter operating at more than 100 Gb/s (4 × 25 Gb/s). The flip-chip interconnection technique provides a good thermal flow comparable to that of the conventional wire interconnection technique but with a higher modulation bandwidth and lower electrical crosstalk. For a flip-chip interconnection 112-Gb/s (4 × 27.9 Gb/s) module, the OTU4 mask margin is only 4% worse for simultaneous four-channel operation than for single-channel operation. For a flip-chip interconnection 400-Gb/s (8 × 50 Gb/s) module, we obtained clear eye openings for all eight lanes with simultaneous eight-channel operation.

Original languageEnglish
Article number7173428
Pages (from-to)296-302
Number of pages7
JournalJournal of Lightwave Technology
Volume34
Issue number2
DOIs
Publication statusPublished - 2016 Jan 15
Externally publishedYes

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Keywords

  • 100 gigabit Ethernet
  • 400 gigabit Ethernet
  • Electro-absorption modulator
  • Flip-chip devices
  • Photonic integrated circuits
  • Semiconductor device packaging
  • Semiconductor laser arrays
  • Semiconductor lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Kanazawa, S., Fujisawa, T., Takahata, K., Ueda, Y., Ishii, H., Iga, R., Kobayashi, W., & Sanjoh, H. (2016). Flip-Chip Interconnection Technique for beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter. Journal of Lightwave Technology, 34(2), 296-302. [7173428]. https://doi.org/10.1109/JLT.2015.2462728