Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure

Shigeru Kanazawa, Toshio Ito, Tomonari Sato, Ryuzo Iga, Wataru Kobayashi, Kiyoto Takahata, Hiroaki Sanjoh, Hiroyuki Ishii

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

Original languageEnglish
Article number20141028
Pages (from-to)1-4
Number of pages4
Journalieice electronics express
Volume12
Issue number1
DOIs
Publication statusPublished - 2014 Dec 19
Externally publishedYes

Keywords

  • 100GbE
  • DML
  • Flip-chip

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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