Floating body RAM technology and its scalability to 32nm node and beyond

Tomoaki Shino, Naoki Kusunoki, Tomoki Higashi, Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Nobuyuki Ikumi, Fumiyoshi Matsuoka, Yasuyuki Kajitani, Ryo Fukuda, Yoji Watanabe, Yoshihiro Minami, Atsushi Sakamoto, Jun Nishimura, Hiroomi Nakajima, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)

Abstract

Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 2006 Dec 102006 Dec 13

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period06/12/1006/12/13

Fingerprint

Random access storage
Threshold voltage
floating
Scalability
SOI (semiconductors)
threshold voltage
time constant
margins
chips
cells
simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Shino, T., Kusunoki, N., Higashi, T., Ohsawa, T., Fujita, K., Hatsuda, K., ... Nitayama, A. (2006). Floating body RAM technology and its scalability to 32nm node and beyond. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154265] https://doi.org/10.1109/IEDM.2006.346846

Floating body RAM technology and its scalability to 32nm node and beyond. / Shino, Tomoaki; Kusunoki, Naoki; Higashi, Tomoki; Ohsawa, Takashi; Fujita, Katsuyuki; Hatsuda, Kosuke; Ikumi, Nobuyuki; Matsuoka, Fumiyoshi; Kajitani, Yasuyuki; Fukuda, Ryo; Watanabe, Yoji; Minami, Yoshihiro; Sakamoto, Atsushi; Nishimura, Jun; Nakajima, Hiroomi; Morikado, Mutsuo; Inoh, Kazumi; Hamamoto, Takeshi; Nitayama, Akihiro.

2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154265.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shino, T, Kusunoki, N, Higashi, T, Ohsawa, T, Fujita, K, Hatsuda, K, Ikumi, N, Matsuoka, F, Kajitani, Y, Fukuda, R, Watanabe, Y, Minami, Y, Sakamoto, A, Nishimura, J, Nakajima, H, Morikado, M, Inoh, K, Hamamoto, T & Nitayama, A 2006, Floating body RAM technology and its scalability to 32nm node and beyond. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154265, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346846
Shino T, Kusunoki N, Higashi T, Ohsawa T, Fujita K, Hatsuda K et al. Floating body RAM technology and its scalability to 32nm node and beyond. In 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154265 https://doi.org/10.1109/IEDM.2006.346846
Shino, Tomoaki ; Kusunoki, Naoki ; Higashi, Tomoki ; Ohsawa, Takashi ; Fujita, Katsuyuki ; Hatsuda, Kosuke ; Ikumi, Nobuyuki ; Matsuoka, Fumiyoshi ; Kajitani, Yasuyuki ; Fukuda, Ryo ; Watanabe, Yoji ; Minami, Yoshihiro ; Sakamoto, Atsushi ; Nishimura, Jun ; Nakajima, Hiroomi ; Morikado, Mutsuo ; Inoh, Kazumi ; Hamamoto, Takeshi ; Nitayama, Akihiro. / Floating body RAM technology and its scalability to 32nm node and beyond. 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006.
@inproceedings{c7d7f65059294288a1eed9ba574e9538,
title = "Floating body RAM technology and its scalability to 32nm node and beyond",
abstract = "Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68{\%} has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.",
author = "Tomoaki Shino and Naoki Kusunoki and Tomoki Higashi and Takashi Ohsawa and Katsuyuki Fujita and Kosuke Hatsuda and Nobuyuki Ikumi and Fumiyoshi Matsuoka and Yasuyuki Kajitani and Ryo Fukuda and Yoji Watanabe and Yoshihiro Minami and Atsushi Sakamoto and Jun Nishimura and Hiroomi Nakajima and Mutsuo Morikado and Kazumi Inoh and Takeshi Hamamoto and Akihiro Nitayama",
year = "2006",
doi = "10.1109/IEDM.2006.346846",
language = "English",
isbn = "1424404398",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",

}

TY - GEN

T1 - Floating body RAM technology and its scalability to 32nm node and beyond

AU - Shino, Tomoaki

AU - Kusunoki, Naoki

AU - Higashi, Tomoki

AU - Ohsawa, Takashi

AU - Fujita, Katsuyuki

AU - Hatsuda, Kosuke

AU - Ikumi, Nobuyuki

AU - Matsuoka, Fumiyoshi

AU - Kajitani, Yasuyuki

AU - Fukuda, Ryo

AU - Watanabe, Yoji

AU - Minami, Yoshihiro

AU - Sakamoto, Atsushi

AU - Nishimura, Jun

AU - Nakajima, Hiroomi

AU - Morikado, Mutsuo

AU - Inoh, Kazumi

AU - Hamamoto, Takeshi

AU - Nitayama, Akihiro

PY - 2006

Y1 - 2006

N2 - Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.

AB - Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.

UR - http://www.scopus.com/inward/record.url?scp=46049102832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46049102832&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2006.346846

DO - 10.1109/IEDM.2006.346846

M3 - Conference contribution

SN - 1424404398

SN - 9781424404391

BT - 2006 International Electron Devices Meeting Technical Digest, IEDM

ER -