The authors propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. The most characteristic aspect of this method is that a very small amount of AsH//3 is added during the TEG flow period. This small amount of AsH//3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.
|Title of host publication||Japanese Journal of Applied Physics, Part 2: Letters|
|Number of pages||3|
|Publication status||Published - 1985 Dec|
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