FLOW-RATE MODULATION EPITAXY OF GaAs.

Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi

Research output: Chapter in Book/Report/Conference proceedingChapter

96 Citations (Scopus)

Abstract

The authors propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. The most characteristic aspect of this method is that a very small amount of AsH//3 is added during the TEG flow period. This small amount of AsH//3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages962-964
Number of pages3
Volume24
Edition12
Publication statusPublished - 1985 Dec
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, N., Makimoto, T., & Horikoshi, Y. (1985). FLOW-RATE MODULATION EPITAXY OF GaAs. In Japanese Journal of Applied Physics, Part 2: Letters (12 ed., Vol. 24, pp. 962-964)