FLOW-RATE MODULATION EPITAXY OF GaAs.

Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi

Research output: Chapter in Book/Report/Conference proceedingChapter

95 Citations (Scopus)

Abstract

The authors propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. The most characteristic aspect of this method is that a very small amount of AsH//3 is added during the TEG flow period. This small amount of AsH//3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages962-964
Number of pages3
Volume24
Edition12
Publication statusPublished - 1985 Dec
Externally publishedYes

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Gallium
Epitaxial growth
Flow rate
Modulation
Growth temperature
Controllability
Arsenic
Vacancies
Flow of gases
Impurities
Atoms
Hydrogen
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, N., Makimoto, T., & Horikoshi, Y. (1985). FLOW-RATE MODULATION EPITAXY OF GaAs. In Japanese Journal of Applied Physics, Part 2: Letters (12 ed., Vol. 24, pp. 962-964)

FLOW-RATE MODULATION EPITAXY OF GaAs. / Kobayashi, Naoki; Makimoto, Toshiki; Horikoshi, Yoshiji.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 24 12. ed. 1985. p. 962-964.

Research output: Chapter in Book/Report/Conference proceedingChapter

Kobayashi, N, Makimoto, T & Horikoshi, Y 1985, FLOW-RATE MODULATION EPITAXY OF GaAs. in Japanese Journal of Applied Physics, Part 2: Letters. 12 edn, vol. 24, pp. 962-964.
Kobayashi N, Makimoto T, Horikoshi Y. FLOW-RATE MODULATION EPITAXY OF GaAs. In Japanese Journal of Applied Physics, Part 2: Letters. 12 ed. Vol. 24. 1985. p. 962-964
Kobayashi, Naoki ; Makimoto, Toshiki ; Horikoshi, Yoshiji. / FLOW-RATE MODULATION EPITAXY OF GaAs. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 24 12. ed. 1985. pp. 962-964
@inbook{f3d1aafd2b3f4d8a80fc70b9a5a79c0b,
title = "FLOW-RATE MODULATION EPITAXY OF GaAs.",
abstract = "The authors propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. The most characteristic aspect of this method is that a very small amount of AsH//3 is added during the TEG flow period. This small amount of AsH//3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.",
author = "Naoki Kobayashi and Toshiki Makimoto and Yoshiji Horikoshi",
year = "1985",
month = "12",
language = "English",
volume = "24",
pages = "962--964",
booktitle = "Japanese Journal of Applied Physics, Part 2: Letters",
edition = "12",

}

TY - CHAP

T1 - FLOW-RATE MODULATION EPITAXY OF GaAs.

AU - Kobayashi, Naoki

AU - Makimoto, Toshiki

AU - Horikoshi, Yoshiji

PY - 1985/12

Y1 - 1985/12

N2 - The authors propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. The most characteristic aspect of this method is that a very small amount of AsH//3 is added during the TEG flow period. This small amount of AsH//3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.

AB - The authors propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. The most characteristic aspect of this method is that a very small amount of AsH//3 is added during the TEG flow period. This small amount of AsH//3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0022191342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022191342&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0022191342

VL - 24

SP - 962

EP - 964

BT - Japanese Journal of Applied Physics, Part 2: Letters

ER -