Flow-rate modulation epitaxy of GaAs

Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

We propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH3) by using hydrogen carrier gas. The most characteristic point of this method is that a very small amount of AsH3 is added during the TEG flow period. This small amount of AsH3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.

Original languageEnglish
Pages (from-to)L962-L964
JournalJapanese journal of applied physics
Volume24
Issue number12
DOIs
Publication statusPublished - 1985 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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