FLOW-RATE MODULATION EPITAXY OF GaAs.

N. Kobayashi, Toshiki Makimoto, Y. Horikoshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We propose a Flow-rate Modulation Epitaxy (FME) method for preparing GaAs thin films with an atomic-order accuracy. This method is based on an alternate gas flow of triethylgallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. However, unlike the atomic layer epitaxy methods reported so far, the AsH//3 flow was not completely stopped. Instead, a very small amount was added during the TEG flow period.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Pages737-738
Number of pages2
Edition79
Publication statusPublished - 1986
Externally publishedYes

Fingerprint

Atomic layer epitaxy
Epitaxial growth
Flow of gases
Flow rate
Modulation
Thin films
Hydrogen
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, N., Makimoto, T., & Horikoshi, Y. (1986). FLOW-RATE MODULATION EPITAXY OF GaAs. In Institute of Physics Conference Series (79 ed., pp. 737-738)

FLOW-RATE MODULATION EPITAXY OF GaAs. / Kobayashi, N.; Makimoto, Toshiki; Horikoshi, Y.

Institute of Physics Conference Series. 79. ed. 1986. p. 737-738.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, N, Makimoto, T & Horikoshi, Y 1986, FLOW-RATE MODULATION EPITAXY OF GaAs. in Institute of Physics Conference Series. 79 edn, pp. 737-738.
Kobayashi N, Makimoto T, Horikoshi Y. FLOW-RATE MODULATION EPITAXY OF GaAs. In Institute of Physics Conference Series. 79 ed. 1986. p. 737-738
Kobayashi, N. ; Makimoto, Toshiki ; Horikoshi, Y. / FLOW-RATE MODULATION EPITAXY OF GaAs. Institute of Physics Conference Series. 79. ed. 1986. pp. 737-738
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