FLOW-RATE MODULATION EPITAXY OF GaAs.

N. Kobayashi, T. Makimoto, Y. Horikoshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We propose a Flow-rate Modulation Epitaxy (FME) method for preparing GaAs thin films with an atomic-order accuracy. This method is based on an alternate gas flow of triethylgallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. However, unlike the atomic layer epitaxy methods reported so far, the AsH//3 flow was not completely stopped. Instead, a very small amount was added during the TEG flow period.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Pages737-738
Number of pages2
Edition79
Publication statusPublished - 1986 Dec 1
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number79
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Kobayashi, N., Makimoto, T., & Horikoshi, Y. (1986). FLOW-RATE MODULATION EPITAXY OF GaAs. In Institute of Physics Conference Series (79 ed., pp. 737-738). (Institute of Physics Conference Series; No. 79).