Abstract
Wurtzite AlBN thin films were fabricated using flow-rate modulation epitaxy (FME), wherein group-III and group-V sources are alternatively supplied to the growing surface. A 350-nm -thick wurtzite Al1-x Bx N (x∼0.015) film grown by FME exhibited a single sharp peak in the ω-2θ scan of x-ray diffraction, a smooth surface with the root-mean-square roughness of 3.4 nm, and a sharp epitaxial interface with SiC(0001) substrate, whereas that prepared by conventional metalorganic chemical vapor deposition contained faceted columnar AlBN (1 1_ 01) crystallites several ten nanometers in width in an AlBN(0001) matrix. FME is useful for fabricating high-quality wurtzite AlBN thin films, because it suppresses polycrystallization through enhancement of the surface migration of boron atoms.
| Original language | English |
|---|---|
| Article number | 041902 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)