Flow-rate modulation epitaxy of wurtzite AlBN

Tetsuya Akasaka, Toshiki Makimoto

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Wurtzite AlBN thin films were fabricated using flow-rate modulation epitaxy (FME), wherein group-III and group-V sources are alternatively supplied to the growing surface. A 350-nm -thick wurtzite Al1-x Bx N (x∼0.015) film grown by FME exhibited a single sharp peak in the ω-2θ scan of x-ray diffraction, a smooth surface with the root-mean-square roughness of 3.4 nm, and a sharp epitaxial interface with SiC(0001) substrate, whereas that prepared by conventional metalorganic chemical vapor deposition contained faceted columnar AlBN (1 1_ 01) crystallites several ten nanometers in width in an AlBN(0001) matrix. FME is useful for fabricating high-quality wurtzite AlBN thin films, because it suppresses polycrystallization through enhancement of the surface migration of boron atoms.

Original languageEnglish
Article number041902
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number4
DOIs
Publication statusPublished - 2006 Feb 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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