Flow-rate modulation epitaxy of wurtzite AlBN

Tetsuya Akasaka, Toshiki Makimoto

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Wurtzite AlBN thin films were fabricated using flow-rate modulation epitaxy (FME), wherein group-III and group-V sources are alternatively supplied to the growing surface. A 350-nm -thick wurtzite Al1-x Bx N (x∼0.015) film grown by FME exhibited a single sharp peak in the ω-2θ scan of x-ray diffraction, a smooth surface with the root-mean-square roughness of 3.4 nm, and a sharp epitaxial interface with SiC(0001) substrate, whereas that prepared by conventional metalorganic chemical vapor deposition contained faceted columnar AlBN (1 1_ 01) crystallites several ten nanometers in width in an AlBN(0001) matrix. FME is useful for fabricating high-quality wurtzite AlBN thin films, because it suppresses polycrystallization through enhancement of the surface migration of boron atoms.

Original languageEnglish
Article number041902
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number4
DOIs
Publication statusPublished - 2006
Externally publishedYes

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wurtzite
epitaxy
flow velocity
modulation
thin films
crystallites
metalorganic chemical vapor deposition
boron
x ray diffraction
roughness
augmentation
matrices
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Flow-rate modulation epitaxy of wurtzite AlBN. / Akasaka, Tetsuya; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 88, No. 4, 041902, 2006, p. 1-3.

Research output: Contribution to journalArticle

Akasaka, Tetsuya ; Makimoto, Toshiki. / Flow-rate modulation epitaxy of wurtzite AlBN. In: Applied Physics Letters. 2006 ; Vol. 88, No. 4. pp. 1-3.
@article{fe622e2908d746bb92efa7345f531b8c,
title = "Flow-rate modulation epitaxy of wurtzite AlBN",
abstract = "Wurtzite AlBN thin films were fabricated using flow-rate modulation epitaxy (FME), wherein group-III and group-V sources are alternatively supplied to the growing surface. A 350-nm -thick wurtzite Al1-x Bx N (x∼0.015) film grown by FME exhibited a single sharp peak in the ω-2θ scan of x-ray diffraction, a smooth surface with the root-mean-square roughness of 3.4 nm, and a sharp epitaxial interface with SiC(0001) substrate, whereas that prepared by conventional metalorganic chemical vapor deposition contained faceted columnar AlBN (1 1_ 01) crystallites several ten nanometers in width in an AlBN(0001) matrix. FME is useful for fabricating high-quality wurtzite AlBN thin films, because it suppresses polycrystallization through enhancement of the surface migration of boron atoms.",
author = "Tetsuya Akasaka and Toshiki Makimoto",
year = "2006",
doi = "10.1063/1.2164900",
language = "English",
volume = "88",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Flow-rate modulation epitaxy of wurtzite AlBN

AU - Akasaka, Tetsuya

AU - Makimoto, Toshiki

PY - 2006

Y1 - 2006

N2 - Wurtzite AlBN thin films were fabricated using flow-rate modulation epitaxy (FME), wherein group-III and group-V sources are alternatively supplied to the growing surface. A 350-nm -thick wurtzite Al1-x Bx N (x∼0.015) film grown by FME exhibited a single sharp peak in the ω-2θ scan of x-ray diffraction, a smooth surface with the root-mean-square roughness of 3.4 nm, and a sharp epitaxial interface with SiC(0001) substrate, whereas that prepared by conventional metalorganic chemical vapor deposition contained faceted columnar AlBN (1 1_ 01) crystallites several ten nanometers in width in an AlBN(0001) matrix. FME is useful for fabricating high-quality wurtzite AlBN thin films, because it suppresses polycrystallization through enhancement of the surface migration of boron atoms.

AB - Wurtzite AlBN thin films were fabricated using flow-rate modulation epitaxy (FME), wherein group-III and group-V sources are alternatively supplied to the growing surface. A 350-nm -thick wurtzite Al1-x Bx N (x∼0.015) film grown by FME exhibited a single sharp peak in the ω-2θ scan of x-ray diffraction, a smooth surface with the root-mean-square roughness of 3.4 nm, and a sharp epitaxial interface with SiC(0001) substrate, whereas that prepared by conventional metalorganic chemical vapor deposition contained faceted columnar AlBN (1 1_ 01) crystallites several ten nanometers in width in an AlBN(0001) matrix. FME is useful for fabricating high-quality wurtzite AlBN thin films, because it suppresses polycrystallization through enhancement of the surface migration of boron atoms.

UR - http://www.scopus.com/inward/record.url?scp=31544464932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31544464932&partnerID=8YFLogxK

U2 - 10.1063/1.2164900

DO - 10.1063/1.2164900

M3 - Article

AN - SCOPUS:31544464932

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 041902

ER -