Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This paper reports on the nitridation of (001) GaAs using atomic nitrogen and the etching characteristics of the nitride layers formed using atomic hydrogen. Nitrogen and hydrogen molecules were cracked by a hot W filament to produce atomic nitrogen and hydrogen. After nitridation and etching, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. We determine the sheet nitrogen atom concentration for these structures by secondary ion mass spectrometry analysis. As the nitridation temperature decreases, the etched nitrogen atom concentration increases. The N-As bonds might be responsible for this increased concentration. The etching rate also depends on the substrate temperature.

Original languageEnglish
Pages (from-to)345-347
Number of pages3
JournalSolid-State Electronics
Volume41
Issue number2 SPEC. ISS.
Publication statusPublished - 1997 Feb
Externally publishedYes

Fingerprint

Nitrides
nitrides
Hydrogen
atom concentration
Etching
Nitrogen
etching
Nitridation
nitrogen
nitrogen atoms
hydrogen
caps
secondary ion mass spectrometry
filaments
molecular beam epitaxy
Atoms
Secondary ion mass spectrometry
temperature
Molecular beam epitaxy
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen. / Makimoto, Toshiki; Kobayashi, Naoki.

In: Solid-State Electronics, Vol. 41, No. 2 SPEC. ISS., 02.1997, p. 345-347.

Research output: Contribution to journalArticle

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