Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen

Toshiki Makimoto*, Naoki Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


This paper reports on the nitridation of (001) GaAs using atomic nitrogen and the etching characteristics of the nitride layers formed using atomic hydrogen. Nitrogen and hydrogen molecules were cracked by a hot W filament to produce atomic nitrogen and hydrogen. After nitridation and etching, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. We determine the sheet nitrogen atom concentration for these structures by secondary ion mass spectrometry analysis. As the nitridation temperature decreases, the etched nitrogen atom concentration increases. The N-As bonds might be responsible for this increased concentration. The etching rate also depends on the substrate temperature.

Original languageEnglish
Pages (from-to)345-347
Number of pages3
JournalSolid-State Electronics
Issue number2 SPEC. ISS.
Publication statusPublished - 1997 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen'. Together they form a unique fingerprint.

Cite this