Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

    Original languageEnglish
    Pages (from-to)9-19
    Number of pages11
    JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
    Volume121
    Issue number3
    Publication statusPublished - 1997

    Fingerprint

    Excimer lasers
    Gamma rays
    Defects
    Lasers

    Keywords

    • Amorphous SiO
    • Electron spin resonance
    • Excimer laser: Co γ ray
    • Mechanical stress
    • Optical absorption
    • Paramagnetic defect center

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

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    abstract = "The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.",
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    TY - JOUR

    T1 - Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2

    AU - Nishikawa, Hiroyuki

    AU - Watanabe, Eiki

    AU - Ito, Daisuke

    AU - Ohki, Yoshimichi

    PY - 1997

    Y1 - 1997

    N2 - The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

    AB - The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

    KW - Amorphous SiO

    KW - Electron spin resonance

    KW - Excimer laser: Co γ ray

    KW - Mechanical stress

    KW - Optical absorption

    KW - Paramagnetic defect center

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