Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu, Y. Iwasa

    Research output: Contribution to journalArticle

    150 Citations (Scopus)

    Abstract

    Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

    Original languageEnglish
    Pages (from-to)3023-3028
    Number of pages6
    JournalNano Letters
    Volume13
    Issue number7
    DOIs
    Publication statusPublished - 2013 Jul 10

    Keywords

    • ambipolar
    • electric double-layer transistor
    • Molybdenum disulfide
    • p-n junction

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanical Engineering

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  • Cite this

    Zhang, Y. J., Ye, J. T., Yomogida, Y., Takenobu, T., & Iwasa, Y. (2013). Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. Nano Letters, 13(7), 3023-3028. https://doi.org/10.1021/nl400902v