Abstract
Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.
Original language | English |
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Pages (from-to) | 3023-3028 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 13 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2013 Jul 10 |
Keywords
- ambipolar
- electric double-layer transistor
- Molybdenum disulfide
- p-n junction
ASJC Scopus subject areas
- Condensed Matter Physics
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanical Engineering