Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

Y. J. Zhang; J. T. Ye; Y. Yomogida; T. Takenobu; Y. Iwasa

doi:10.1021/nl400902v

Formation of a stable p-n junction in a liquid-gated MoS₂ ambipolar transistor

Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu, Y. Iwasa

Research output: Contribution to journal › Article

150 Citations (Scopus)

Abstract

Molybdenum disulfide (MoS₂) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS₂ transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

Original language	English
Pages (from-to)	3023-3028
Number of pages	6
Journal	Nano Letters
Volume	13
Issue number	7
DOIs	https://doi.org/10.1021/nl400902v
Publication status	Published - 2013 Jul 10

Keywords

ambipolar
electric double-layer transistor
Molybdenum disulfide
p-n junction

ASJC Scopus subject areas

Condensed Matter Physics
Bioengineering
Chemistry(all)
Materials Science(all)
Mechanical Engineering

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10.1021/nl400902v

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Zhang, Y. J., Ye, J. T., Yomogida, Y., Takenobu, T., & Iwasa, Y. (2013). Formation of a stable p-n junction in a liquid-gated MoS₂ ambipolar transistor. Nano Letters, 13(7), 3023-3028. https://doi.org/10.1021/nl400902v

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AU - Iwasa, Y.

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AB - Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

KW - ambipolar

KW - electric double-layer transistor

KW - Molybdenum disulfide

KW - p-n junction

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