Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu, Y. Iwasa

    Research output: Contribution to journal › Article

    131 Citations (Scopus)

    Abstract

    Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

    Original languageEnglish
    Pages (from-to)3023-3028
    Number of pages6
    JournalNano Letters
    Volume13
    Issue number7
    DOIs
    Publication statusPublished - 2013 Jul 10

    Fingerprint

    Dichroism
    p-n junctions
    Optoelectronic devices
    Molybdenum
    Transistors
    Diodes
    transistors
    molybdenum disulfides
    Liquids
    liquids
    optoelectronic devices
    dichroism
    diodes
    molybdenum disulfide

    Keywords

    • ambipolar
    • electric double-layer transistor
    • Molybdenum disulfide
    • p-n junction

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanical Engineering

    Cite this

    Zhang, Y. J., Ye, J. T., Yomogida, Y., Takenobu, T., & Iwasa, Y. (2013). Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. Nano Letters, 13(7), 3023-3028. https://doi.org/10.1021/nl400902v

    Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. / Zhang, Y. J.; Ye, J. T.; Yomogida, Y.; Takenobu, T.; Iwasa, Y.

    In: Nano Letters, Vol. 13, No. 7, 10.07.2013, p. 3023-3028.

    Research output: Contribution to journal › Article

    Zhang, YJ, Ye, JT, Yomogida, Y, Takenobu, T & Iwasa, Y 2013, 'Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor', Nano Letters, vol. 13, no. 7, pp. 3023-3028. https://doi.org/10.1021/nl400902v
    Zhang YJ, Ye JT, Yomogida Y, Takenobu T, Iwasa Y. Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. Nano Letters. 2013 Jul 10;13(7):3023-3028. https://doi.org/10.1021/nl400902v
    Zhang, Y. J. ; Ye, J. T. ; Yomogida, Y. ; Takenobu, T. ; Iwasa, Y. / Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. In: Nano Letters. 2013 ; Vol. 13, No. 7. pp. 3023-3028.
    @article{b2d66f20fe5f43f7a34f82e3065b5440,
    title = "Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor",
    abstract = "Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.",
    keywords = "ambipolar, electric double-layer transistor, Molybdenum disulfide, p-n junction",
    author = "Zhang, {Y. J.} and Ye, {J. T.} and Y. Yomogida and T. Takenobu and Y. Iwasa",
    year = "2013",
    month = "7",
    day = "10",
    doi = "10.1021/nl400902v",
    language = "English",
    volume = "13",
    pages = "3023--3028",
    journal = "Nano Letters",
    issn = "1530-6984",
    publisher = "American Chemical Society",
    number = "7",

    }

    TY - JOUR

    T1 - Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

    AU - Zhang, Y. J.

    AU - Ye, J. T.

    AU - Yomogida, Y.

    AU - Takenobu, T.

    AU - Iwasa, Y.

    PY - 2013/7/10

    Y1 - 2013/7/10

    N2 - Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

    AB - Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

    KW - ambipolar

    KW - electric double-layer transistor

    KW - Molybdenum disulfide

    KW - p-n junction

    UR - http://www.scopus.com/inward/record.url?scp=84880155520&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84880155520&partnerID=8YFLogxK

    U2 - 10.1021/nl400902v

    DO - 10.1021/nl400902v

    M3 - Article

    AN - SCOPUS:84880155520

    VL - 13

    SP - 3023

    EP - 3028

    JO - Nano Letters

    JF - Nano Letters

    SN - 1530-6984

    IS - 7

    ER -

    Access to Document