Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

Y. J. Zhang; J. T. Ye; Y. Yomogida; T. Takenobu; Y. Iwasa

doi:10.1021/nl400902v

Formation of a stable p-n junction in a liquid-gated MoS₂ ambipolar transistor

Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu, Y. Iwasa

Research output: Contribution to journal › Article › peer-review

159 Citations (Scopus)

Abstract

Molybdenum disulfide (MoS₂) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS₂ transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

Original language	English
Pages (from-to)	3023-3028
Number of pages	6
Journal	Nano Letters
Volume	13
Issue number	7
DOIs	https://doi.org/10.1021/nl400902v
Publication status	Published - 2013 Jul 10

Keywords

ambipolar
electric double-layer transistor
Molybdenum disulfide
p-n junction

ASJC Scopus subject areas

Condensed Matter Physics
Bioengineering
Chemistry(all)
Materials Science(all)
Mechanical Engineering

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@article{b2d66f20fe5f43f7a34f82e3065b5440,

title = "Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor",

abstract = "Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.",

keywords = "ambipolar, electric double-layer transistor, Molybdenum disulfide, p-n junction",

author = "Zhang, {Y. J.} and Ye, {J. T.} and Y. Yomogida and T. Takenobu and Y. Iwasa",

year = "2013",

month = jul,

day = "10",

doi = "10.1021/nl400902v",

language = "English",

volume = "13",

pages = "3023--3028",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

AU - Zhang, Y. J.

AU - Ye, J. T.

AU - Yomogida, Y.

AU - Takenobu, T.

AU - Iwasa, Y.

PY - 2013/7/10

Y1 - 2013/7/10

N2 - Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

AB - Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

KW - ambipolar

KW - electric double-layer transistor

KW - Molybdenum disulfide

KW - p-n junction

UR - http://www.scopus.com/inward/record.url?scp=84880155520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880155520&partnerID=8YFLogxK

U2 - 10.1021/nl400902v

DO - 10.1021/nl400902v

M3 - Article

AN - SCOPUS:84880155520

VL - 13

SP - 3023

EP - 3028

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 7

ER -