Formation of a thin III-VI compound interfacial layer at ZnTe/ZnSe heterojunction and its effect on energy band discontinuity

T. Yoshida, T. Nagatake, Masakazu Kobayashi, A. Yoshikawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Interfacial layers were inserted at the interface of ZnSe and ZnTe in order to reduce both (1) the effect of strain and (2) the valence band discontinuity. The interfacial layer adapted in this study is the III-VI compound (Ga,Se). The layered structure GaSe is favorable for the present work, because it can be a buffer layer to relax the lattice mismatch at the interface. All layers including ZnTe, (Ga,Se) and ZnSe were grown on (100) GaAs substrate by conventional molecular beam epitaxy. The crystal structure of the (Ga,Se) on ZnSe was investigated. The growth of the layered structure GaSe layer on (100) ZnSe was very difficult, though the defect zinc-blende structure Ga2Se3 layer could be easily grown. The defect zinc-blende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity could be modified. The discontinuity was decreased to about 0.1 eV when the thickness of the interfacial layer was about 8Å. The current-voltage characteristics were measured for the sample with Ga2Se3 interfacial layer. The structure with Ga2Se3 exhibited the ohmic property. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

Original languageEnglish
Pages (from-to)195-199
Number of pages5
JournalJournal of Electronic Materials
Volume25
Issue number2
Publication statusPublished - 1996 Feb
Externally publishedYes

Fingerprint

Valence bands
Band structure
energy bands
Heterojunctions
heterojunctions
discontinuity
Zinc
Defects
Lattice mismatch
Buffer layers
Current voltage characteristics
Molecular beam epitaxy
Crystal structure
valence
Substrates
zinc
defects
gallium selenide
molecular beam epitaxy
buffers

Keywords

  • Defect zinc-blende structure
  • GaSe
  • GaSe
  • III-VI compound
  • Layered structure
  • Reduction of energy band discontinuity
  • Relaxation of lattice mismatch

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Formation of a thin III-VI compound interfacial layer at ZnTe/ZnSe heterojunction and its effect on energy band discontinuity. / Yoshida, T.; Nagatake, T.; Kobayashi, Masakazu; Yoshikawa, A.

In: Journal of Electronic Materials, Vol. 25, No. 2, 02.1996, p. 195-199.

Research output: Contribution to journalArticle

@article{c13f9501f4a849c7a3228926e520e2ad,
title = "Formation of a thin III-VI compound interfacial layer at ZnTe/ZnSe heterojunction and its effect on energy band discontinuity",
abstract = "Interfacial layers were inserted at the interface of ZnSe and ZnTe in order to reduce both (1) the effect of strain and (2) the valence band discontinuity. The interfacial layer adapted in this study is the III-VI compound (Ga,Se). The layered structure GaSe is favorable for the present work, because it can be a buffer layer to relax the lattice mismatch at the interface. All layers including ZnTe, (Ga,Se) and ZnSe were grown on (100) GaAs substrate by conventional molecular beam epitaxy. The crystal structure of the (Ga,Se) on ZnSe was investigated. The growth of the layered structure GaSe layer on (100) ZnSe was very difficult, though the defect zinc-blende structure Ga2Se3 layer could be easily grown. The defect zinc-blende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity could be modified. The discontinuity was decreased to about 0.1 eV when the thickness of the interfacial layer was about 8{\AA}. The current-voltage characteristics were measured for the sample with Ga2Se3 interfacial layer. The structure with Ga2Se3 exhibited the ohmic property. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.",
keywords = "Defect zinc-blende structure, GaSe, GaSe, III-VI compound, Layered structure, Reduction of energy band discontinuity, Relaxation of lattice mismatch",
author = "T. Yoshida and T. Nagatake and Masakazu Kobayashi and A. Yoshikawa",
year = "1996",
month = "2",
language = "English",
volume = "25",
pages = "195--199",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "2",

}

TY - JOUR

T1 - Formation of a thin III-VI compound interfacial layer at ZnTe/ZnSe heterojunction and its effect on energy band discontinuity

AU - Yoshida, T.

AU - Nagatake, T.

AU - Kobayashi, Masakazu

AU - Yoshikawa, A.

PY - 1996/2

Y1 - 1996/2

N2 - Interfacial layers were inserted at the interface of ZnSe and ZnTe in order to reduce both (1) the effect of strain and (2) the valence band discontinuity. The interfacial layer adapted in this study is the III-VI compound (Ga,Se). The layered structure GaSe is favorable for the present work, because it can be a buffer layer to relax the lattice mismatch at the interface. All layers including ZnTe, (Ga,Se) and ZnSe were grown on (100) GaAs substrate by conventional molecular beam epitaxy. The crystal structure of the (Ga,Se) on ZnSe was investigated. The growth of the layered structure GaSe layer on (100) ZnSe was very difficult, though the defect zinc-blende structure Ga2Se3 layer could be easily grown. The defect zinc-blende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity could be modified. The discontinuity was decreased to about 0.1 eV when the thickness of the interfacial layer was about 8Å. The current-voltage characteristics were measured for the sample with Ga2Se3 interfacial layer. The structure with Ga2Se3 exhibited the ohmic property. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

AB - Interfacial layers were inserted at the interface of ZnSe and ZnTe in order to reduce both (1) the effect of strain and (2) the valence band discontinuity. The interfacial layer adapted in this study is the III-VI compound (Ga,Se). The layered structure GaSe is favorable for the present work, because it can be a buffer layer to relax the lattice mismatch at the interface. All layers including ZnTe, (Ga,Se) and ZnSe were grown on (100) GaAs substrate by conventional molecular beam epitaxy. The crystal structure of the (Ga,Se) on ZnSe was investigated. The growth of the layered structure GaSe layer on (100) ZnSe was very difficult, though the defect zinc-blende structure Ga2Se3 layer could be easily grown. The defect zinc-blende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity could be modified. The discontinuity was decreased to about 0.1 eV when the thickness of the interfacial layer was about 8Å. The current-voltage characteristics were measured for the sample with Ga2Se3 interfacial layer. The structure with Ga2Se3 exhibited the ohmic property. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

KW - Defect zinc-blende structure

KW - GaSe

KW - GaSe

KW - III-VI compound

KW - Layered structure

KW - Reduction of energy band discontinuity

KW - Relaxation of lattice mismatch

UR - http://www.scopus.com/inward/record.url?scp=6144230081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6144230081&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:6144230081

VL - 25

SP - 195

EP - 199

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 2

ER -