Formation of a thin SiO2 film using synchrotron radiation excited reaction

Taro Ogawa, Isao Ochiai, Kozo Mochiji, Atsushi Hiraiwa, Yuji Takakuwa, Michio Niwano, Nobuo Miyamoto

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Abstract

The possibility of altering an oxygen-adsorbed Si surface to SiO 2 using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO 2-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H+ ions, which are emitted from the surface, is also detected during SR irradiation. The Si - O bond formation model followed by H+ PSD explains this oxidation.

Original languageEnglish
Pages (from-to)794-796
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number7
DOIs
Publication statusPublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ogawa, T., Ochiai, I., Mochiji, K., Hiraiwa, A., Takakuwa, Y., Niwano, M., & Miyamoto, N. (1991). Formation of a thin SiO2 film using synchrotron radiation excited reaction. Applied Physics Letters, 59(7), 794-796. https://doi.org/10.1063/1.105345