Formation of a thin SiO2 film using synchrotron radiation excited reaction

Taro Ogawa, Isao Ochiai, Kozo Mochiji, Atsushi Hiraiwa, Yuji Takakuwa, Michio Niwano, Nobuo Miyamoto

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The possibility of altering an oxygen-adsorbed Si surface to SiO 2 using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO 2-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H+ ions, which are emitted from the surface, is also detected during SR irradiation. The Si - O bond formation model followed by H+ PSD explains this oxidation.

Original languageEnglish
Pages (from-to)794-796
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number7
DOIs
Publication statusPublished - 1991
Externally publishedYes

Fingerprint

synchrotron radiation
thin films
oxygen
desorption
x ray spectroscopy
photoelectron spectroscopy
oxidation
irradiation
gases
ions
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ogawa, T., Ochiai, I., Mochiji, K., Hiraiwa, A., Takakuwa, Y., Niwano, M., & Miyamoto, N. (1991). Formation of a thin SiO2 film using synchrotron radiation excited reaction. Applied Physics Letters, 59(7), 794-796. https://doi.org/10.1063/1.105345

Formation of a thin SiO2 film using synchrotron radiation excited reaction. / Ogawa, Taro; Ochiai, Isao; Mochiji, Kozo; Hiraiwa, Atsushi; Takakuwa, Yuji; Niwano, Michio; Miyamoto, Nobuo.

In: Applied Physics Letters, Vol. 59, No. 7, 1991, p. 794-796.

Research output: Contribution to journalArticle

Ogawa, T, Ochiai, I, Mochiji, K, Hiraiwa, A, Takakuwa, Y, Niwano, M & Miyamoto, N 1991, 'Formation of a thin SiO2 film using synchrotron radiation excited reaction', Applied Physics Letters, vol. 59, no. 7, pp. 794-796. https://doi.org/10.1063/1.105345
Ogawa T, Ochiai I, Mochiji K, Hiraiwa A, Takakuwa Y, Niwano M et al. Formation of a thin SiO2 film using synchrotron radiation excited reaction. Applied Physics Letters. 1991;59(7):794-796. https://doi.org/10.1063/1.105345
Ogawa, Taro ; Ochiai, Isao ; Mochiji, Kozo ; Hiraiwa, Atsushi ; Takakuwa, Yuji ; Niwano, Michio ; Miyamoto, Nobuo. / Formation of a thin SiO2 film using synchrotron radiation excited reaction. In: Applied Physics Letters. 1991 ; Vol. 59, No. 7. pp. 794-796.
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