Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth

A. Kawaharazuka, T. Saku, Y. Hirayama, Y. Horikoshi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.

Original languageEnglish
Pages (from-to)952-954
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number2
Publication statusPublished - 2000 Jan 15

Fingerprint

electron gas
aluminum gallium arsenides
scattering

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth. / Kawaharazuka, A.; Saku, T.; Hirayama, Y.; Horikoshi, Y.

In: Journal of Applied Physics, Vol. 87, No. 2, 15.01.2000, p. 952-954.

Research output: Contribution to journalArticle

Kawaharazuka, A, Saku, T, Hirayama, Y & Horikoshi, Y 2000, 'Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth', Journal of Applied Physics, vol. 87, no. 2, pp. 952-954.
Kawaharazuka, A. ; Saku, T. ; Hirayama, Y. ; Horikoshi, Y. / Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 2. pp. 952-954.
@article{ebcf1869096144a3848b6885e1ac216e,
title = "Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth",
abstract = "We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.",
author = "A. Kawaharazuka and T. Saku and Y. Hirayama and Y. Horikoshi",
year = "2000",
month = "1",
day = "15",
language = "English",
volume = "87",
pages = "952--954",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth

AU - Kawaharazuka, A.

AU - Saku, T.

AU - Hirayama, Y.

AU - Horikoshi, Y.

PY - 2000/1/15

Y1 - 2000/1/15

N2 - We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.

AB - We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.

UR - http://www.scopus.com/inward/record.url?scp=0000535255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000535255&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000535255

VL - 87

SP - 952

EP - 954

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -