Formation of diffusion barrier layer on low-k material using wet fabrication process

M. Yoshino, Tokihiko Yokoshima, Tetsuya Osaka, A. Hashimoto, Y. Hagiwara, I. Sato

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel wet process based on electroless deposition for the fabrication of a diffusion barrier layer for ULSI interconnections is proposed. In this paper, the formation of diffusion barrier layer on low-k substrate using novel wet process was investigated. The fabrication of electroless Nickel-Boron (NiB) layer as a diffusion barrier layer on low-k film using Pd-activated self-assembled monolayer (SAM) as a seed/adhesion layer was attained on low-k film following the dielectric surface modification using ultra-violet (UV) light irradiation. The obtained layer where uniform, had small grain size, and showed good adhesion to low-k materials, both organic and inorganic. We report on the deposition process as well as on the thin film properties.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsH. Deligianni, S.T. Mayer, T.P. Moffat, G.R. Stafford
Pages251-263
Number of pages13
VolumePV 2004-17
Publication statusPublished - 2004
Event205th ECS Meeting - San Antonio, TX
Duration: 2004 May 92004 May 13

Other

Other205th ECS Meeting
CitySan Antonio, TX
Period04/5/904/5/13

Fingerprint

Diffusion barriers
Fabrication
Adhesion
Electroless plating
Self assembled monolayers
Boron
Seed
Surface treatment
Nickel
Irradiation
Thin films
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yoshino, M., Yokoshima, T., Osaka, T., Hashimoto, A., Hagiwara, Y., & Sato, I. (2004). Formation of diffusion barrier layer on low-k material using wet fabrication process. In H. Deligianni, S. T. Mayer, T. P. Moffat, & G. R. Stafford (Eds.), Proceedings - Electrochemical Society (Vol. PV 2004-17, pp. 251-263)

Formation of diffusion barrier layer on low-k material using wet fabrication process. / Yoshino, M.; Yokoshima, Tokihiko; Osaka, Tetsuya; Hashimoto, A.; Hagiwara, Y.; Sato, I.

Proceedings - Electrochemical Society. ed. / H. Deligianni; S.T. Mayer; T.P. Moffat; G.R. Stafford. Vol. PV 2004-17 2004. p. 251-263.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoshino, M, Yokoshima, T, Osaka, T, Hashimoto, A, Hagiwara, Y & Sato, I 2004, Formation of diffusion barrier layer on low-k material using wet fabrication process. in H Deligianni, ST Mayer, TP Moffat & GR Stafford (eds), Proceedings - Electrochemical Society. vol. PV 2004-17, pp. 251-263, 205th ECS Meeting, San Antonio, TX, 04/5/9.
Yoshino M, Yokoshima T, Osaka T, Hashimoto A, Hagiwara Y, Sato I. Formation of diffusion barrier layer on low-k material using wet fabrication process. In Deligianni H, Mayer ST, Moffat TP, Stafford GR, editors, Proceedings - Electrochemical Society. Vol. PV 2004-17. 2004. p. 251-263
Yoshino, M. ; Yokoshima, Tokihiko ; Osaka, Tetsuya ; Hashimoto, A. ; Hagiwara, Y. ; Sato, I. / Formation of diffusion barrier layer on low-k material using wet fabrication process. Proceedings - Electrochemical Society. editor / H. Deligianni ; S.T. Mayer ; T.P. Moffat ; G.R. Stafford. Vol. PV 2004-17 2004. pp. 251-263
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