Formation of diffusion barrier layer on low-k material using wet fabrication process

M. Yoshino, T. Yokoshima, T. Osaka, A. Hashimoto, Y. Hagiwara, I. Sato

Research output: Contribution to conferencePaper

Abstract

A novel wet process based on electroless deposition for the fabrication of a diffusion barrier layer for ULSI interconnections is proposed. In this paper, the formation of diffusion barrier layer on low-k substrate using novel wet process was investigated. The fabrication of electroless Nickel-Boron (NiB) layer as a diffusion barrier layer on low-k film using Pd-activated self-assembled monolayer (SAM) as a seed/adhesion layer was attained on low-k film following the dielectric surface modification using ultra-violet (UV) light irradiation. The obtained layer where uniform, had small grain size, and showed good adhesion to low-k materials, both organic and inorganic. We report on the deposition process as well as on the thin film properties.

Original languageEnglish
Pages251-263
Number of pages13
Publication statusPublished - 2004 Dec 1
Event205th ECS Meeting - San Antonio, TX, United States
Duration: 2004 May 92004 May 13

Conference

Conference205th ECS Meeting
CountryUnited States
CitySan Antonio, TX
Period04/5/904/5/13

ASJC Scopus subject areas

  • Engineering(all)

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    Yoshino, M., Yokoshima, T., Osaka, T., Hashimoto, A., Hagiwara, Y., & Sato, I. (2004). Formation of diffusion barrier layer on low-k material using wet fabrication process. 251-263. Paper presented at 205th ECS Meeting, San Antonio, TX, United States.