Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

Hirofumi Kakemoto*, Hiroshi Katsumata, Takeaki Takada, Yu Shin Tsai, Masataka Hasegawa, Shiro Sakuragi, Naoto Kobayashi, Yunosuke Makita, Takeyo Tsukamoto, Shin Ichiro Uekusa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Polycrystalline β-FeSi2 was made by ion beam synthesis (IBS) using implantation of Fe+ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi2 is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi2 layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (Eg) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi2. Similar features were obtained for β-FeSi2 crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi2 layers were fabricated on n-type Si (100) substrates by Mn+ ion-implantation into EBD-grown β-FeSi2 layers and subsequent annealing.

Original languageEnglish
Pages (from-to)284-291
Number of pages8
JournalMaterials Science and Engineering A
Issue number1-2
Publication statusPublished - 1998 Sept 30
Externally publishedYes


  • FeSi2(β)
  • Ion beam synthesis
  • Optical properties
  • Photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)


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