Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

Hirofumi Kakemoto, Hiroshi Katsumata, Takeaki Takada, Yu Shin Tsai, Masataka Hasegawa, Shiro Sakuragi, Naoto Kobayashi, Yunosuke Makita, Takeyo Tsukamoto, Shin Ichiro Uekusa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Polycrystalline β-FeSi2 was made by ion beam synthesis (IBS) using implantation of Fe+ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi2 is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi2 layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (Eg) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi2. Similar features were obtained for β-FeSi2 crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi2 layers were fabricated on n-type Si (100) substrates by Mn+ ion-implantation into EBD-grown β-FeSi2 layers and subsequent annealing.

Original languageEnglish
Pages (from-to)284-291
Number of pages8
JournalMaterials Science and Engineering A
Volume253
Issue number1-2
Publication statusPublished - 1998 Sep 30
Externally publishedYes

Fingerprint

Ion implantation
ion implantation
Optical properties
Annealing
optical properties
annealing
Electron beams
electron beams
Rutherford backscattering spectroscopy
Ion beams
implantation
backscattering
Photoluminescence
Energy gap
ion beams
Ions
photoluminescence
X ray diffraction
gradients
Crystals

Keywords

  • FeSi2(β)
  • Ion beam synthesis
  • Optical properties
  • Photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Kakemoto, H., Katsumata, H., Takada, T., Tsai, Y. S., Hasegawa, M., Sakuragi, S., ... Uekusa, S. I. (1998). Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties. Materials Science and Engineering A, 253(1-2), 284-291.

Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties. / Kakemoto, Hirofumi; Katsumata, Hiroshi; Takada, Takeaki; Tsai, Yu Shin; Hasegawa, Masataka; Sakuragi, Shiro; Kobayashi, Naoto; Makita, Yunosuke; Tsukamoto, Takeyo; Uekusa, Shin Ichiro.

In: Materials Science and Engineering A, Vol. 253, No. 1-2, 30.09.1998, p. 284-291.

Research output: Contribution to journalArticle

Kakemoto, H, Katsumata, H, Takada, T, Tsai, YS, Hasegawa, M, Sakuragi, S, Kobayashi, N, Makita, Y, Tsukamoto, T & Uekusa, SI 1998, 'Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties', Materials Science and Engineering A, vol. 253, no. 1-2, pp. 284-291.
Kakemoto H, Katsumata H, Takada T, Tsai YS, Hasegawa M, Sakuragi S et al. Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties. Materials Science and Engineering A. 1998 Sep 30;253(1-2):284-291.
Kakemoto, Hirofumi ; Katsumata, Hiroshi ; Takada, Takeaki ; Tsai, Yu Shin ; Hasegawa, Masataka ; Sakuragi, Shiro ; Kobayashi, Naoto ; Makita, Yunosuke ; Tsukamoto, Takeyo ; Uekusa, Shin Ichiro. / Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties. In: Materials Science and Engineering A. 1998 ; Vol. 253, No. 1-2. pp. 284-291.
@article{200179f12d594da69fc7a7247344b699,
title = "Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties",
abstract = "Polycrystalline β-FeSi2 was made by ion beam synthesis (IBS) using implantation of Fe+ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi2 is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi2 layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (Eg) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi2. Similar features were obtained for β-FeSi2 crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi2 layers were fabricated on n-type Si (100) substrates by Mn+ ion-implantation into EBD-grown β-FeSi2 layers and subsequent annealing.",
keywords = "FeSi2(β), Ion beam synthesis, Optical properties, Photoluminescence",
author = "Hirofumi Kakemoto and Hiroshi Katsumata and Takeaki Takada and Tsai, {Yu Shin} and Masataka Hasegawa and Shiro Sakuragi and Naoto Kobayashi and Yunosuke Makita and Takeyo Tsukamoto and Uekusa, {Shin Ichiro}",
year = "1998",
month = "9",
day = "30",
language = "English",
volume = "253",
pages = "284--291",
journal = "Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing",
issn = "0921-5093",
publisher = "Elsevier BV",
number = "1-2",

}

TY - JOUR

T1 - Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

AU - Kakemoto, Hirofumi

AU - Katsumata, Hiroshi

AU - Takada, Takeaki

AU - Tsai, Yu Shin

AU - Hasegawa, Masataka

AU - Sakuragi, Shiro

AU - Kobayashi, Naoto

AU - Makita, Yunosuke

AU - Tsukamoto, Takeyo

AU - Uekusa, Shin Ichiro

PY - 1998/9/30

Y1 - 1998/9/30

N2 - Polycrystalline β-FeSi2 was made by ion beam synthesis (IBS) using implantation of Fe+ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi2 is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi2 layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (Eg) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi2. Similar features were obtained for β-FeSi2 crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi2 layers were fabricated on n-type Si (100) substrates by Mn+ ion-implantation into EBD-grown β-FeSi2 layers and subsequent annealing.

AB - Polycrystalline β-FeSi2 was made by ion beam synthesis (IBS) using implantation of Fe+ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi2 is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi2 layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (Eg) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi2. Similar features were obtained for β-FeSi2 crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi2 layers were fabricated on n-type Si (100) substrates by Mn+ ion-implantation into EBD-grown β-FeSi2 layers and subsequent annealing.

KW - FeSi2(β)

KW - Ion beam synthesis

KW - Optical properties

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0032158258&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032158258&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032158258

VL - 253

SP - 284

EP - 291

JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

SN - 0921-5093

IS - 1-2

ER -