Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

Hirofumi Kakemoto; Hiroshi Katsumata; Takeaki Takada; Yu Shin Tsai; Masataka Hasegawa; Shiro Sakuragi; Naoto Kobayashi; Yunosuke Makita; Takeyo Tsukamoto; Shin Ichiro Uekusa

Formation of polycrystalline β-FeSi₂ layers by ion-implantation and their optical properties

Hirofumi Kakemoto^*, Hiroshi Katsumata, Takeaki Takada, Yu Shin Tsai, Masataka Hasegawa, Shiro Sakuragi, Naoto Kobayashi, Yunosuke Makita, Takeyo Tsukamoto, Shin Ichiro Uekusa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Polycrystalline β-FeSi₂ was made by ion beam synthesis (IBS) using implantation of Fe⁺ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi₂ is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi₂ layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (E_g) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi₂. Similar features were obtained for β-FeSi₂ crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi₂ layers were fabricated on n-type Si (100) substrates by Mn⁺ ion-implantation into EBD-grown β-FeSi₂ layers and subsequent annealing.

Original language	English
Pages (from-to)	284-291
Number of pages	8
Journal	Materials Science and Engineering A
Volume	253
Issue number	1-2
Publication status	Published - 1998 Sept 30
Externally published	Yes

Keywords

FeSi2(β)
Ion beam synthesis
Optical properties
Photoluminescence

ASJC Scopus subject areas

Materials Science(all)

Cite this

@article{200179f12d594da69fc7a7247344b699,

title = "Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties",

abstract = "Polycrystalline β-FeSi2 was made by ion beam synthesis (IBS) using implantation of Fe+ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi2 is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi2 layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (Eg) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi2. Similar features were obtained for β-FeSi2 crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi2 layers were fabricated on n-type Si (100) substrates by Mn+ ion-implantation into EBD-grown β-FeSi2 layers and subsequent annealing.",

keywords = "FeSi2(β), Ion beam synthesis, Optical properties, Photoluminescence",

author = "Hirofumi Kakemoto and Hiroshi Katsumata and Takeaki Takada and Tsai, {Yu Shin} and Masataka Hasegawa and Shiro Sakuragi and Naoto Kobayashi and Yunosuke Makita and Takeyo Tsukamoto and Uekusa, {Shin Ichiro}",

year = "1998",

month = sep,

day = "30",

language = "English",

volume = "253",

pages = "284--291",

journal = "Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing",

issn = "0921-5093",

publisher = "Elsevier BV",

number = "1-2",

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TY - JOUR

T1 - Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

AU - Kakemoto, Hirofumi

AU - Katsumata, Hiroshi

AU - Takada, Takeaki

AU - Tsai, Yu Shin

AU - Hasegawa, Masataka

AU - Sakuragi, Shiro

AU - Kobayashi, Naoto

AU - Makita, Yunosuke

AU - Tsukamoto, Takeyo

AU - Uekusa, Shin Ichiro

PY - 1998/9/30

Y1 - 1998/9/30

N2 - Polycrystalline β-FeSi2 was made by ion beam synthesis (IBS) using implantation of Fe+ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi2 is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi2 layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (Eg) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi2. Similar features were obtained for β-FeSi2 crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi2 layers were fabricated on n-type Si (100) substrates by Mn+ ion-implantation into EBD-grown β-FeSi2 layers and subsequent annealing.

AB - Polycrystalline β-FeSi2 was made by ion beam synthesis (IBS) using implantation of Fe+ ions into Si. Results from two-step annealing (2SA) and three-step annealing (3SA) processes are discussed. X-ray diffraction data exhibited that for 3SA samples, β-FeSi2 is grown at specific annealing conditions, whereas it is always formed for 2SA samples. The formation of β-FeSi2 layer with thickness of 59-79 nm was confirmed by Rutherford backscattering measurements. The 3SA-sample showed a direct band-gap energy (Eg) of 0.88 eV and 0.80 eV for the 2SA sample. In the 2 K photoluminescence spectra, two emissions at 0.786-0.808 eV were ascribed to β-FeSi2. Similar features were obtained for β-FeSi2 crystals prepared by horizontal gradient freeze and electron beam deposition (EBD) methods. p-Type β-FeSi2 layers were fabricated on n-type Si (100) substrates by Mn+ ion-implantation into EBD-grown β-FeSi2 layers and subsequent annealing.

KW - FeSi2(β)

KW - Ion beam synthesis

KW - Optical properties

KW - Photoluminescence

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SN - 0921-5093

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JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

IS - 1-2

ER -

Formation of polycrystalline β-FeSi₂ layers by ion-implantation and their optical properties

Abstract

Keywords

ASJC Scopus subject areas

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