Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

M. Kasu, Toshiki Makimoto, W. Ebert, E. Kohn

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.

Original languageEnglish
Pages (from-to)3465-3467
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number17
DOIs
Publication statusPublished - 2003 Oct 27
Externally publishedYes

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crystal defects
diamonds
vapors
atoms
covalent bonds
scale models
vapor deposition

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers. / Kasu, M.; Makimoto, Toshiki; Ebert, W.; Kohn, E.

In: Applied Physics Letters, Vol. 83, No. 17, 27.10.2003, p. 3465-3467.

Research output: Contribution to journalArticle

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