Abstract
The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.
| Original language | English |
|---|---|
| Pages (from-to) | 3465-3467 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2003 Oct 27 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers. / Kasu, M.; Makimoto, Toshiki; Ebert, W.; Kohn, E.
In: Applied Physics Letters, Vol. 83, No. 17, 27.10.2003, p. 3465-3467.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers
AU - Kasu, M.
AU - Makimoto, Toshiki
AU - Ebert, W.
AU - Kohn, E.
PY - 2003/10/27
Y1 - 2003/10/27
N2 - The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.
AB - The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.
UR - http://www.scopus.com/inward/record.url?scp=0242415226&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0242415226&partnerID=8YFLogxK
U2 - 10.1063/1.1622105
DO - 10.1063/1.1622105
M3 - Article
AN - SCOPUS:0242415226
VL - 83
SP - 3465
EP - 3467
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 17
ER -