Abstract
The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.
| Original language | English |
|---|---|
| Pages (from-to) | 3465-3467 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2003 Oct 27 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Kasu, M., Makimoto, T., Ebert, W., & Kohn, E. (2003). Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers. Applied Physics Letters, 83(17), 3465-3467. https://doi.org/10.1063/1.1622105