Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

M. Kasu; T. Makimoto; W. Ebert; E. Kohn

doi:10.1063/1.1622105

Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

M. Kasu^*, T. Makimoto, W. Ebert, E. Kohn

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.

Original language	English
Pages (from-to)	3465-3467
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	17
DOIs	https://doi.org/10.1063/1.1622105
Publication status	Published - 2003 Oct 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.",

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AU - Kasu, M.

AU - Makimoto, T.

AU - Ebert, W.

AU - Kohn, E.

PY - 2003/10/27

Y1 - 2003/10/27

N2 - The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.

AB - The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.

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ER -

Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

Abstract

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