Abstract
The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.
Original language | English |
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Pages (from-to) | 3465-3467 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2003 Oct 27 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)