Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

M. Kasu, Toshiki Makimoto, W. Ebert, E. Kohn

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The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.

Original languageEnglish
Pages (from-to)3465-3467
Number of pages3
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2003 Oct 27
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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