Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

M. Kasu; Toshiki Makimoto; W. Ebert; E. Kohn

doi:10.1063/1.1622105

Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

M. Kasu, Toshiki Makimoto, W. Ebert, E. Kohn

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.

Original language	English
Pages (from-to)	3465-3467
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	17
DOIs	https://doi.org/10.1063/1.1622105
Publication status	Published - 2003 Oct 27
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Kasu, M., Makimoto, T., Ebert, W., & Kohn, E. (2003). Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers. Applied Physics Letters, 83(17), 3465-3467. https://doi.org/10.1063/1.1622105

@article{f5561bcfb55f466b9f132c34e914c71b,

title = "Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers",

abstract = "The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.",

author = "M. Kasu and Toshiki Makimoto and W. Ebert and E. Kohn",

year = "2003",

month = oct

day = "27",

doi = "10.1063/1.1622105",

language = "English",

volume = "83",

pages = "3465--3467",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

AU - Kasu, M.

AU - Makimoto, Toshiki

AU - Ebert, W.

AU - Kohn, E.

PY - 2003/10/27

Y1 - 2003/10/27

N2 - The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.

AB - The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.

UR - http://www.scopus.com/inward/record.url?scp=0242415226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242415226&partnerID=8YFLogxK

U2 - 10.1063/1.1622105

DO - 10.1063/1.1622105

M3 - Article

AN - SCOPUS:0242415226

VL - 83

SP - 3465

EP - 3467

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -

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10.1063/1.1622105