The features of stacking faults, containing microtwins, were discussed. Stacking faults were formed in (111)-oriented diamond layers, which were grown on diamond homoepitaxial layers by using chemical vapor deposition. An Atomic-scale model, where a foreign atom remained on the high-pressure high-temperature (HPHT) substrate surface, was suggested. In the model, a covalent bond could not be formed by a C atom on the foreign atom.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)