Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono, S. F. Chichibu

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Abstract

Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

Original languageEnglish
Article number023529
JournalJournal of Applied Physics
Volume105
Issue number2
DOIs
Publication statusPublished - 2009 Feb 9

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Onuma, T., Shibata, T., Kosaka, K., Asai, K., Sumiya, S., Tanaka, M., Sota, T., Uedono, A., & Chichibu, S. F. (2009). Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 105(2), [023529]. https://doi.org/10.1063/1.3068335