Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, Takayuki Sota, A. Uedono, S. F. Chichibu

    Research output: Contribution to journalArticle

    45 Citations (Scopus)

    Abstract

    Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

    Original languageEnglish
    Article number023529
    JournalJournal of Applied Physics
    Volume105
    Issue number2
    DOIs
    Publication statusPublished - 2009

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    vapor phase epitaxy
    low pressure
    fine structure
    excitons
    cathodoluminescence
    binding energy
    reflectance
    ground state
    excitation
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Onuma, T., Shibata, T., Kosaka, K., Asai, K., Sumiya, S., Tanaka, M., ... Chichibu, S. F. (2009). Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 105(2), [023529]. https://doi.org/10.1063/1.3068335

    Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. / Onuma, T.; Shibata, T.; Kosaka, K.; Asai, K.; Sumiya, S.; Tanaka, M.; Sota, Takayuki; Uedono, A.; Chichibu, S. F.

    In: Journal of Applied Physics, Vol. 105, No. 2, 023529, 2009.

    Research output: Contribution to journalArticle

    Onuma, T, Shibata, T, Kosaka, K, Asai, K, Sumiya, S, Tanaka, M, Sota, T, Uedono, A & Chichibu, SF 2009, 'Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy', Journal of Applied Physics, vol. 105, no. 2, 023529. https://doi.org/10.1063/1.3068335
    Onuma, T. ; Shibata, T. ; Kosaka, K. ; Asai, K. ; Sumiya, S. ; Tanaka, M. ; Sota, Takayuki ; Uedono, A. ; Chichibu, S. F. / Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 2.
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    abstract = "Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68{\%}) AlN was estimated to be approximately 51 meV.",
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    AU - Onuma, T.

    AU - Shibata, T.

    AU - Kosaka, K.

    AU - Asai, K.

    AU - Sumiya, S.

    AU - Tanaka, M.

    AU - Sota, Takayuki

    AU - Uedono, A.

    AU - Chichibu, S. F.

    PY - 2009

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    AB - Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

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