Free energy of mixing and vapour pressure of liquid Ga-As, In-As, Ga-P and In-P alloys

Katsunori Yamaguchi*, Kimio Itagaki, Adolf Mikula

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The change of the Gibbs energy of the reaction between group IIIA and VA elements to form a liquid III-V alloy was derived for the Ga-As, In-As, Ga-P and In-P systems by combining the heat content of the alloy with the heat and entropy of formation of the equiatomic compound at a reference temperature. The obtained data were analysed by using a Redlich-Kister polynomial equation and the optimized parameters were derived for a temperature range between 873 and 1523 K and a composition range between xv = 0 and 0.5 (for the Ga-P system between xp = 0 and 0.1). The partial pressures of these liquid alloys were expressed as a function of alloy composition and temperature. Partial pressure and total pressure-composition-temperature diagrams were constructed.

Original languageEnglish
Pages (from-to)279-285
Number of pages7
JournalZeitschrift fuer Metallkunde/Materials Research and Advanced Techniques
Issue number4
Publication statusPublished - 1998 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Metals and Alloys
  • Materials Chemistry


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