Full-scale whole device EMC/MD simulation of Si nanowire transistor including source and drain regions by utilizing graphic processing units

Akito Suzuki, Takanobu Watanabe, Yoshinari Kamakura, Takefumi Kamioka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have realized the full-scale whole device EMC/MD simulation including source and drain regions by utilizing graphic processing unit. The transfer characteristic of a gate-all-around nanowire Si MOSFET is simulated by reproducing the field effect of the surrounding gate electrode with spreading charged particles on the gate insulator layer. We have found an appreciable impact of the random dopant distribution (RDF) in source and drain regions on the drain current variability. Furthermore, the dynamic fluctuation of the drain current is found to be increase as the channel length decreases. The EMC/MD simulation powered by GPU is a useful method to investigate the dynamic fluctuation as well as the statistical device-to-device variability of nano-scale FETs.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages357-360
Number of pages4
ISBN (Electronic)9781479952885
DOIs
Publication statusPublished - 2014 Oct 20
Event2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 - Yokohama, Japan
Duration: 2014 Sep 92014 Sep 11

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
CountryJapan
CityYokohama
Period14/9/914/9/11

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Keywords

  • Graphic Processing Unit (GPU)
  • Si nanowire Transistor
  • ensemble Monte Carlo/molecular dynamics (EMC/MD)
  • random dopant fluctuation (RDF)
  • random telegraph noise (RTN)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

Suzuki, A., Watanabe, T., Kamakura, Y., & Kamioka, T. (2014). Full-scale whole device EMC/MD simulation of Si nanowire transistor including source and drain regions by utilizing graphic processing units. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 357-360). [6931637] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2014.6931637