Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino; Tomoki Higashi; Naoki Kusunoki; Katsuyuki Fujita; Takashi Ohsawa; Nobutoshi Aoki; Hiroyoshi Tanimoto; Yoshihiro Minami; Takashi Yamada; Mutsuo Morikado; Hiroomi Nakajima; Kazumi Inoh; Takeshi Hamamoto; Akihiro Nitayama

Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino^*, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Yoshihiro Minami, Takashi Yamada, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

Original language	English
Pages (from-to)	281-282
Number of pages	2
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 2004
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{f4997d9fbf3249e7aa24f2e5d870c7b4,

title = "Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility",

abstract = "Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.",

author = "Tomoaki Shino and Tomoki Higashi and Naoki Kusunoki and Katsuyuki Fujita and Takashi Ohsawa and Nobutoshi Aoki and Hiroyoshi Tanimoto and Yoshihiro Minami and Takashi Yamada and Mutsuo Morikado and Hiroomi Nakajima and Kazumi Inoh and Takeshi Hamamoto and Akihiro Nitayama",

note = "Funding Information: The authors would like, to thank Shigeyoshi Watanabe and Hidemi Ishiuchi for their support throughout this work.; IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

year = "2004",

language = "English",

pages = "281--282",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

AU - Shino, Tomoaki

AU - Higashi, Tomoki

AU - Kusunoki, Naoki

AU - Fujita, Katsuyuki

AU - Ohsawa, Takashi

AU - Aoki, Nobutoshi

AU - Tanimoto, Hiroyoshi

AU - Minami, Yoshihiro

AU - Yamada, Takashi

AU - Morikado, Mutsuo

AU - Nakajima, Hiroomi

AU - Inoh, Kazumi

AU - Hamamoto, Takeshi

AU - Nitayama, Akihiro

N1 - Funding Information: The authors would like, to thank Shigeyoshi Watanabe and Hidemi Ishiuchi for their support throughout this work.

PY - 2004

Y1 - 2004

N2 - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

AB - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

UR - http://www.scopus.com/inward/record.url?scp=18144376522&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18144376522&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:18144376522

SP - 281

EP - 282

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Abstract

ASJC Scopus subject areas

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