Abstract
Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.
Original language | English |
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Pages (from-to) | 281-282 |
Number of pages | 2 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
Publication status | Published - 2004 Dec 1 |
Externally published | Yes |
Event | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry