TY - JOUR
T1 - Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility
AU - Shino, Tomoaki
AU - Higashi, Tomoki
AU - Kusunoki, Naoki
AU - Fujita, Katsuyuki
AU - Ohsawa, Takashi
AU - Aoki, Nobutoshi
AU - Tanimoto, Hiroyoshi
AU - Minami, Yoshihiro
AU - Yamada, Takashi
AU - Morikado, Mutsuo
AU - Nakajima, Hiroomi
AU - Inoh, Kazumi
AU - Hamamoto, Takeshi
AU - Nitayama, Akihiro
N1 - Funding Information:
The authors would like, to thank Shigeyoshi Watanabe and Hidemi Ishiuchi for their support throughout this work.
PY - 2004
Y1 - 2004
N2 - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.
AB - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.
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M3 - Conference article
AN - SCOPUS:18144376522
SP - 281
EP - 282
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
T2 - IEEE International Electron Devices Meeting, 2004 IEDM
Y2 - 13 December 2004 through 15 December 2004
ER -