Abstract
Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.
| Original language | English |
|---|---|
| Pages (from-to) | 281-282 |
| Number of pages | 2 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| Publication status | Published - 2004 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. / Shino, Tomoaki; Higashi, Tomoki; Kusunoki, Naoki; Fujita, Katsuyuki; Ohsawa, Takashi; Aoki, Nobutoshi; Tanimoto, Hiroyoshi; Minami, Yoshihiro; Yamada, Takashi; Morikado, Mutsuo; Nakajima, Hiroomi; Inoh, Kazumi; Hamamoto, Takeshi; Nitayama, Akihiro.
In: Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 281-282.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility
AU - Shino, Tomoaki
AU - Higashi, Tomoki
AU - Kusunoki, Naoki
AU - Fujita, Katsuyuki
AU - Ohsawa, Takashi
AU - Aoki, Nobutoshi
AU - Tanimoto, Hiroyoshi
AU - Minami, Yoshihiro
AU - Yamada, Takashi
AU - Morikado, Mutsuo
AU - Nakajima, Hiroomi
AU - Inoh, Kazumi
AU - Hamamoto, Takeshi
AU - Nitayama, Akihiro
PY - 2004
Y1 - 2004
N2 - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.
AB - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.
UR - http://www.scopus.com/inward/record.url?scp=18144376522&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=18144376522&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:18144376522
SP - 281
EP - 282
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
ER -