Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Yoshihiro Minami, Takashi Yamada, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

Original languageEnglish
Pages (from-to)281-282
Number of pages2
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Shino, T., Higashi, T., Kusunoki, N., Fujita, K., Ohsawa, T., Aoki, N., Tanimoto, H., Minami, Y., Yamada, T., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., & Nitayama, A. (2004). Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. Technical Digest - International Electron Devices Meeting, IEDM, 281-282.