Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino; Tomoki Higashi; Naoki Kusunoki; Katsuyuki Fujita; Takashi Ohsawa; Nobutoshi Aoki; Hiroyoshi Tanimoto; Yoshihiro Minami; Takashi Yamada; Mutsuo Morikado; Hiroomi Nakajima; Kazumi Inoh; Takeshi Hamamoto; Akihiro Nitayama

Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Yoshihiro Minami, Takashi Yamada, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

Original language	English
Pages (from-to)	281-282
Number of pages	2
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 2004
Externally published	Yes

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

Shino, T., Higashi, T., Kusunoki, N., Fujita, K., Ohsawa, T., Aoki, N., Tanimoto, H., Minami, Y., Yamada, T., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., & Nitayama, A. (2004). Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. Technical Digest - International Electron Devices Meeting, IEDM, 281-282.

Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. / Shino, Tomoaki; Higashi, Tomoki; Kusunoki, Naoki; Fujita, Katsuyuki; Ohsawa, Takashi; Aoki, Nobutoshi; Tanimoto, Hiroyoshi; Minami, Yoshihiro; Yamada, Takashi; Morikado, Mutsuo; Nakajima, Hiroomi; Inoh, Kazumi; Hamamoto, Takeshi; Nitayama, Akihiro.

In: Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 281-282.

Research output: Contribution to journal › Article

Shino, Tomoaki ; Higashi, Tomoki ; Kusunoki, Naoki ; Fujita, Katsuyuki ; Ohsawa, Takashi ; Aoki, Nobutoshi ; Tanimoto, Hiroyoshi ; Minami, Yoshihiro ; Yamada, Takashi ; Morikado, Mutsuo ; Nakajima, Hiroomi ; Inoh, Kazumi ; Hamamoto, Takeshi ; Nitayama, Akihiro. / Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. In: Technical Digest - International Electron Devices Meeting, IEDM. 2004 ; pp. 281-282.

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AU - Tanimoto, Hiroyoshi

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AU - Yamada, Takashi

AU - Morikado, Mutsuo

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AU - Inoh, Kazumi

AU - Hamamoto, Takeshi

AU - Nitayama, Akihiro

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AB - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

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Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Abstract

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ASJC Scopus subject areas

Cite this

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