Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino; Tomoki Higashi; Naoki Kusunoki; Katsuyuki Fujita; Takashi Ohsawa; Nobutoshi Aoki; Hiroyoshi Tanimoto; Yoshihiro Minami; Takashi Yamada; Mutsuo Morikado; Hiroomi Nakajima; Kazumi Inoh; Takeshi Hamamoto; Akihiro Nitayama

Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Yoshihiro Minami, Takashi Yamada, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

Abstract

Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

Original language	English
Pages (from-to)	281-282
Number of pages	2
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 2004 Dec 1
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Shino, T., Higashi, T., Kusunoki, N., Fujita, K., Ohsawa, T., Aoki, N., Tanimoto, H., Minami, Y., Yamada, T., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., & Nitayama, A. (2004). Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. Technical Digest - International Electron Devices Meeting, IEDM, 281-282.

Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. / Shino, Tomoaki; Higashi, Tomoki; Kusunoki, Naoki; Fujita, Katsuyuki; Ohsawa, Takashi; Aoki, Nobutoshi; Tanimoto, Hiroyoshi; Minami, Yoshihiro; Yamada, Takashi; Morikado, Mutsuo; Nakajima, Hiroomi; Inoh, Kazumi; Hamamoto, Takeshi; Nitayama, Akihiro.

In: Technical Digest - International Electron Devices Meeting, IEDM, 01.12.2004, p. 281-282.

Research output: Contribution to journal › Conference article › peer-review

Shino, Tomoaki ; Higashi, Tomoki ; Kusunoki, Naoki ; Fujita, Katsuyuki ; Ohsawa, Takashi ; Aoki, Nobutoshi ; Tanimoto, Hiroyoshi ; Minami, Yoshihiro ; Yamada, Takashi ; Morikado, Mutsuo ; Nakajima, Hiroomi ; Inoh, Kazumi ; Hamamoto, Takeshi ; Nitayama, Akihiro. / Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. In: Technical Digest - International Electron Devices Meeting, IEDM. 2004 ; pp. 281-282.

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abstract = "Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.",

author = "Tomoaki Shino and Tomoki Higashi and Naoki Kusunoki and Katsuyuki Fujita and Takashi Ohsawa and Nobutoshi Aoki and Hiroyoshi Tanimoto and Yoshihiro Minami and Takashi Yamada and Mutsuo Morikado and Hiroomi Nakajima and Kazumi Inoh and Takeshi Hamamoto and Akihiro Nitayama",

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T1 - Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

AU - Shino, Tomoaki

AU - Higashi, Tomoki

AU - Kusunoki, Naoki

AU - Fujita, Katsuyuki

AU - Ohsawa, Takashi

AU - Aoki, Nobutoshi

AU - Tanimoto, Hiroyoshi

AU - Minami, Yoshihiro

AU - Yamada, Takashi

AU - Morikado, Mutsuo

AU - Nakajima, Hiroomi

AU - Inoh, Kazumi

AU - Hamamoto, Takeshi

AU - Nitayama, Akihiro

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

AB - Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

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