Abstract
A fully integrated novel power amplifier (PA) using 130nm CMOS process is presented for Electric Toll Collection (ETC) applications. To obtain good efficiency and high linear gain performance, a novel cascode PA based on a class E PA has been designed, fabricated and fully measured. The proposed PA is a single-ended single-stage amplifier at an operating voltage of only 2 V. The power added efficiency (PAE) of the PA is as high as 42.6% with a gain of 11.4dB at P1dB of 13.4dBm. This CMOS PA includes all matching circuits and biasing circuits, and no external components are required.
| Original language | English |
|---|---|
| Title of host publication | APMC 2009 - Asia Pacific Microwave Conference 2009 |
| Pages | 365-368 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2009 |
| Event | Asia Pacific Microwave Conference 2009, APMC 2009 - Singapore Duration: 2009 Dec 7 → 2009 Dec 10 |
Other
| Other | Asia Pacific Microwave Conference 2009, APMC 2009 |
|---|---|
| City | Singapore |
| Period | 09/12/7 → 09/12/10 |
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Keywords
- CMOS
- Electric toll collection
- High efficiency
- Power amplifier
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Fully-integrated novel high efficiency linear CMOS power amplifier for 5.8 GHz ETC applications. / Suh, YongJu; Sun, Jiangtao; Horie, Koji; Itoh, Nobuyuki; Yoshimasu, Toshihiko.
APMC 2009 - Asia Pacific Microwave Conference 2009. 2009. p. 365-368 5384529.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fully-integrated novel high efficiency linear CMOS power amplifier for 5.8 GHz ETC applications
AU - Suh, YongJu
AU - Sun, Jiangtao
AU - Horie, Koji
AU - Itoh, Nobuyuki
AU - Yoshimasu, Toshihiko
PY - 2009
Y1 - 2009
N2 - A fully integrated novel power amplifier (PA) using 130nm CMOS process is presented for Electric Toll Collection (ETC) applications. To obtain good efficiency and high linear gain performance, a novel cascode PA based on a class E PA has been designed, fabricated and fully measured. The proposed PA is a single-ended single-stage amplifier at an operating voltage of only 2 V. The power added efficiency (PAE) of the PA is as high as 42.6% with a gain of 11.4dB at P1dB of 13.4dBm. This CMOS PA includes all matching circuits and biasing circuits, and no external components are required.
AB - A fully integrated novel power amplifier (PA) using 130nm CMOS process is presented for Electric Toll Collection (ETC) applications. To obtain good efficiency and high linear gain performance, a novel cascode PA based on a class E PA has been designed, fabricated and fully measured. The proposed PA is a single-ended single-stage amplifier at an operating voltage of only 2 V. The power added efficiency (PAE) of the PA is as high as 42.6% with a gain of 11.4dB at P1dB of 13.4dBm. This CMOS PA includes all matching circuits and biasing circuits, and no external components are required.
KW - CMOS
KW - Electric toll collection
KW - High efficiency
KW - Power amplifier
UR - http://www.scopus.com/inward/record.url?scp=77950636622&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77950636622&partnerID=8YFLogxK
U2 - 10.1109/APMC.2009.5384529
DO - 10.1109/APMC.2009.5384529
M3 - Conference contribution
SN - 9781424428021
SP - 365
EP - 368
BT - APMC 2009 - Asia Pacific Microwave Conference 2009
ER -