Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device

A. Matsumoto, Y. Takei, A. Matsushita, K. Akahane, Y. Matsushima, K. Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.

Original languageEnglish
Title of host publicationTechnical Digest of the 18th Microoptics Conference, MOC 2013
Publication statusPublished - 2013 Dec 1
Event2013 18th Microoptics Conference, MOC 2013 - Tokyo, Japan
Duration: 2013 Oct 272013 Oct 30

Publication series

NameTechnical Digest of the 18th Microoptics Conference, MOC 2013

Conference

Conference2013 18th Microoptics Conference, MOC 2013
CountryJapan
CityTokyo
Period13/10/2713/10/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Matsumoto, A., Takei, Y., Matsushita, A., Akahane, K., Matsushima, Y., & Utaka, K. (2013). Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. In Technical Digest of the 18th Microoptics Conference, MOC 2013 [6715095] (Technical Digest of the 18th Microoptics Conference, MOC 2013).