Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device

A. Matsumoto, Y. Takei, A. Matsushita, K. Akahane, Yuichi Matsushima, Katsuyuki Utaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.

    Original languageEnglish
    Title of host publicationTechnical Digest of the 18th Microoptics Conference, MOC 2013
    Publication statusPublished - 2013
    Event2013 18th Microoptics Conference, MOC 2013 - Tokyo
    Duration: 2013 Oct 272013 Oct 30

    Other

    Other2013 18th Microoptics Conference, MOC 2013
    CityTokyo
    Period13/10/2713/10/30

    Fingerprint

    Logic gates
    Service oriented architecture (SOA)
    Substrates
    Semiconductor quantum dots

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Matsumoto, A., Takei, Y., Matsushita, A., Akahane, K., Matsushima, Y., & Utaka, K. (2013). Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. In Technical Digest of the 18th Microoptics Conference, MOC 2013 [6715095]

    Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. / Matsumoto, A.; Takei, Y.; Matsushita, A.; Akahane, K.; Matsushima, Yuichi; Utaka, Katsuyuki.

    Technical Digest of the 18th Microoptics Conference, MOC 2013. 2013. 6715095.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Matsumoto, A, Takei, Y, Matsushita, A, Akahane, K, Matsushima, Y & Utaka, K 2013, Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. in Technical Digest of the 18th Microoptics Conference, MOC 2013., 6715095, 2013 18th Microoptics Conference, MOC 2013, Tokyo, 13/10/27.
    Matsumoto A, Takei Y, Matsushita A, Akahane K, Matsushima Y, Utaka K. Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. In Technical Digest of the 18th Microoptics Conference, MOC 2013. 2013. 6715095
    Matsumoto, A. ; Takei, Y. ; Matsushita, A. ; Akahane, K. ; Matsushima, Yuichi ; Utaka, Katsuyuki. / Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. Technical Digest of the 18th Microoptics Conference, MOC 2013. 2013.
    @inproceedings{2d98ba7f5d9243d08538a7c30491e711,
    title = "Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device",
    abstract = "In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.",
    author = "A. Matsumoto and Y. Takei and A. Matsushita and K. Akahane and Yuichi Matsushima and Katsuyuki Utaka",
    year = "2013",
    language = "English",
    isbn = "9784863483453",
    booktitle = "Technical Digest of the 18th Microoptics Conference, MOC 2013",

    }

    TY - GEN

    T1 - Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device

    AU - Matsumoto, A.

    AU - Takei, Y.

    AU - Matsushita, A.

    AU - Akahane, K.

    AU - Matsushima, Yuichi

    AU - Utaka, Katsuyuki

    PY - 2013

    Y1 - 2013

    N2 - In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.

    AB - In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.

    UR - http://www.scopus.com/inward/record.url?scp=84894185590&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84894185590&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:84894185590

    SN - 9784863483453

    BT - Technical Digest of the 18th Microoptics Conference, MOC 2013

    ER -