Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device

A. Matsumoto, Y. Takei, A. Matsushita, K. Akahane, Yuichi Matsushima, Katsuyuki Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.

Original languageEnglish
Title of host publicationTechnical Digest of the 18th Microoptics Conference, MOC 2013
Publication statusPublished - 2013
Event2013 18th Microoptics Conference, MOC 2013 - Tokyo
Duration: 2013 Oct 272013 Oct 30

Other

Other2013 18th Microoptics Conference, MOC 2013
CityTokyo
Period13/10/2713/10/30

Fingerprint

Logic gates
Service oriented architecture (SOA)
Substrates
Semiconductor quantum dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Matsumoto, A., Takei, Y., Matsushita, A., Akahane, K., Matsushima, Y., & Utaka, K. (2013). Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. In Technical Digest of the 18th Microoptics Conference, MOC 2013 [6715095]

Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. / Matsumoto, A.; Takei, Y.; Matsushita, A.; Akahane, K.; Matsushima, Yuichi; Utaka, Katsuyuki.

Technical Digest of the 18th Microoptics Conference, MOC 2013. 2013. 6715095.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsumoto, A, Takei, Y, Matsushita, A, Akahane, K, Matsushima, Y & Utaka, K 2013, Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. in Technical Digest of the 18th Microoptics Conference, MOC 2013., 6715095, 2013 18th Microoptics Conference, MOC 2013, Tokyo, 13/10/27.
Matsumoto A, Takei Y, Matsushita A, Akahane K, Matsushima Y, Utaka K. Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. In Technical Digest of the 18th Microoptics Conference, MOC 2013. 2013. 6715095
Matsumoto, A. ; Takei, Y. ; Matsushita, A. ; Akahane, K. ; Matsushima, Yuichi ; Utaka, Katsuyuki. / Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device. Technical Digest of the 18th Microoptics Conference, MOC 2013. 2013.
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