The structure, fabrication and fundamental filtering characterstics of an InGaAsP semiconductor-type in-line wavelength selective filter with a Fabry-Perot etalon resonator were presented. Filtering was obtained at transmission wavelength interval of 0.8 nm. The devices were fabricated by liquid phase epitaxy (LPE) on Inp substrates.
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|Publication status||Published - 2001 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering