Fundamental transverse mode 100 mW semiconductor laser with high reliability

T. Yamaguchi, K. Yodoshi, K. Minakuchi, Y. Inoue, K. Komeda, N. Tabuchi, Y. Bessho, K. Mori, T. Niina

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDan Botez, Luis Figueroa
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages126-133
Number of pages8
Volume1219
ISBN (Print)0819402605
Publication statusPublished - 1990
Externally publishedYes
EventLaser-Diode Technology and Applications II - Los Angeles, CA, USA
Duration: 1990 Jan 161990 Jan 19

Other

OtherLaser-Diode Technology and Applications II
CityLos Angeles, CA, USA
Period90/1/1690/1/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Yamaguchi, T., Yodoshi, K., Minakuchi, K., Inoue, Y., Komeda, K., Tabuchi, N., Bessho, Y., Mori, K., & Niina, T. (1990). Fundamental transverse mode 100 mW semiconductor laser with high reliability. In D. Botez, & L. Figueroa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1219, pp. 126-133). Publ by Int Soc for Optical Engineering.