Future technology proposal for Damascene process using all wet electrochemical technique

Tetsuya Osaka, Masahiro Yoshino, Yosi Shacham-Diamand

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

All-wet process was developed for fabricating diffusion barrier layer and Copper wiring for ultra large scale integration (ULSI) by means of a combination technique of electroless deposition and surface modification of Pd-activated ligand-bearing organic layer. In this paper, we performed detailed analysis of the Pd-activated ligand-bearing organic layer. Moreover, we successfully deposited thin electroless NiB layer on the Pd-activated molecular layer of 3-[2-(2-aminoethylamino)ethylamino]propyltrimethoxysilane (TAS) in a small reactor at a low temperature in a few minutes.

Original languageEnglish
Title of host publicationECS Transactions
Pages67-73
Number of pages7
Volume19
Edition24
DOIs
Publication statusPublished - 2009
EventElectrochemical Processing in ULSI and MEMS 4 - 215th ECS Meeting - San Francisco, CA
Duration: 2009 May 242009 May 29

Other

OtherElectrochemical Processing in ULSI and MEMS 4 - 215th ECS Meeting
CitySan Francisco, CA
Period09/5/2409/5/29

Fingerprint

Bearings (structural)
ULSI circuits
Ligands
Diffusion barriers
Electroless plating
Electric wiring
Surface treatment
Copper
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Osaka, T., Yoshino, M., & Shacham-Diamand, Y. (2009). Future technology proposal for Damascene process using all wet electrochemical technique. In ECS Transactions (24 ed., Vol. 19, pp. 67-73) https://doi.org/10.1149/1.3246599

Future technology proposal for Damascene process using all wet electrochemical technique. / Osaka, Tetsuya; Yoshino, Masahiro; Shacham-Diamand, Yosi.

ECS Transactions. Vol. 19 24. ed. 2009. p. 67-73.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Osaka, T, Yoshino, M & Shacham-Diamand, Y 2009, Future technology proposal for Damascene process using all wet electrochemical technique. in ECS Transactions. 24 edn, vol. 19, pp. 67-73, Electrochemical Processing in ULSI and MEMS 4 - 215th ECS Meeting, San Francisco, CA, 09/5/24. https://doi.org/10.1149/1.3246599
Osaka T, Yoshino M, Shacham-Diamand Y. Future technology proposal for Damascene process using all wet electrochemical technique. In ECS Transactions. 24 ed. Vol. 19. 2009. p. 67-73 https://doi.org/10.1149/1.3246599
Osaka, Tetsuya ; Yoshino, Masahiro ; Shacham-Diamand, Yosi. / Future technology proposal for Damascene process using all wet electrochemical technique. ECS Transactions. Vol. 19 24. ed. 2009. pp. 67-73
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