Future technology proposal for Damascene process using all wet electrochemical technique

Tetsuya Osaka*, Masahiro Yoshino, Yosi Shacham-Diamand

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

All-wet process was developed for fabricating diffusion barrier layer and Copper wiring for ultra large scale integration (ULSI) by means of a combination technique of electroless deposition and surface modification of Pd-activated ligand-bearing organic layer. In this paper, we performed detailed analysis of the Pd-activated ligand-bearing organic layer. Moreover, we successfully deposited thin electroless NiB layer on the Pd-activated molecular layer of 3-[2-(2-aminoethylamino)ethylamino]propyltrimethoxysilane (TAS) in a small reactor at a low temperature in a few minutes.

Original languageEnglish
Title of host publicationElectrochemical Processing in ULSI and MEMS 4
Pages67-73
Number of pages7
Edition24
DOIs
Publication statusPublished - 2009 Dec 1
EventElectrochemical Processing in ULSI and MEMS 4 - 215th ECS Meeting - San Francisco, CA, United States
Duration: 2009 May 242009 May 29

Publication series

NameECS Transactions
Number24
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceElectrochemical Processing in ULSI and MEMS 4 - 215th ECS Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period09/5/2409/5/29

ASJC Scopus subject areas

  • Engineering(all)

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