Abstract
A novel GaAs FET structure has been developed. In order to decrease the source resistance and gate capacitance a shallow n** plus implanted layer was formed between the gate and the source/drain region; then the gate region was slightly recessed. This FET has a high transconductance, low-source resistance, small gate capacitance, and small deviation of threshold voltage. It is suitable for high-speed GaAs LSIs. A 1-kbit static RAM has been designed and fabricated with this FET structure and an access time of 3. 8 ns with 38-mW power dissipation has been obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 1135-1139 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | ED-32 |
| Issue number | 6 |
| Publication status | Published - 1985 Jun |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)