Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate

Atsushi Matsumoto, Yuki Takei, Asuka Matsushita, Kouichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

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    11 Citations (Scopus)


    In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, for the application to ultra-fast all-optical logic gate devices. The device length was 1650 μm, and a maximum gain of 35 dB was obtained under an injection current of 500 mA. We also input two serial femto-second duplicated pulses into the QD-SOA by changing the duration and observed the output auto-correlation waveforms. As a result, an effective carrier transition time was estimated to be about 1 ps.

    Original languageEnglish
    Pages (from-to)51-54
    Number of pages4
    JournalOptics Communications
    Publication statusPublished - 2015 Jun 1



    • 1550 nm-band
    • Femto-second optical pulse response
    • InP(311)B
    • QD-SOA

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics
    • Physical and Theoretical Chemistry

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