Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate

Atsushi Matsumoto, Yuki Takei, Asuka Matsushita, Kouichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

Research output: Contribution to journalArticle

11 Citations (Scopus)


In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, for the application to ultra-fast all-optical logic gate devices. The device length was 1650 μm, and a maximum gain of 35 dB was obtained under an injection current of 500 mA. We also input two serial femto-second duplicated pulses into the QD-SOA by changing the duration and observed the output auto-correlation waveforms. As a result, an effective carrier transition time was estimated to be about 1 ps.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalOptics Communications
Publication statusPublished - 2015 Jun 1



  • 1550 nm-band
  • Femto-second optical pulse response
  • InP(311)B
  • QD-SOA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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