Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices

Atsushi Matsumoto, Yuki Takei, Asuka Matsushita, Kouichi Akahane, Yuichi Matsushima, Katsuyuki Utaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.

    Original languageEnglish
    Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Print)9781479957293
    DOIs
    Publication statusPublished - 2014
    Event26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier
    Duration: 2014 May 112014 May 15

    Other

    Other26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
    CityMontpellier
    Period14/5/1114/5/15

    Fingerprint

    Logic gates
    Service oriented architecture (SOA)
    Laser pulses
    Laser modes
    Autocorrelation
    Molecular beam epitaxy
    Semiconductor quantum dots
    Wavelength
    Compensation and Redress
    indium arsenide

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Matsumoto, A., Takei, Y., Matsushita, A., Akahane, K., Matsushima, Y., & Utaka, K. (2014). Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials [6880561] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2014.6880561

    Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. / Matsumoto, Atsushi; Takei, Yuki; Matsushita, Asuka; Akahane, Kouichi; Matsushima, Yuichi; Utaka, Katsuyuki.

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials. Institute of Electrical and Electronics Engineers Inc., 2014. 6880561.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Matsumoto, A, Takei, Y, Matsushita, A, Akahane, K, Matsushima, Y & Utaka, K 2014, Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials., 6880561, Institute of Electrical and Electronics Engineers Inc., 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Montpellier, 14/5/11. https://doi.org/10.1109/ICIPRM.2014.6880561
    Matsumoto A, Takei Y, Matsushita A, Akahane K, Matsushima Y, Utaka K. Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. Institute of Electrical and Electronics Engineers Inc. 2014. 6880561 https://doi.org/10.1109/ICIPRM.2014.6880561
    Matsumoto, Atsushi ; Takei, Yuki ; Matsushita, Asuka ; Akahane, Kouichi ; Matsushima, Yuichi ; Utaka, Katsuyuki. / Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. Institute of Electrical and Electronics Engineers Inc., 2014.
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    abstract = "We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.",
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    AU - Akahane, Kouichi

    AU - Matsushima, Yuichi

    AU - Utaka, Katsuyuki

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    AB - We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.

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