Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices

Atsushi Matsumoto, Yuki Takei, Asuka Matsushita, Kouichi Akahane, Yuichi Matsushima, Katsuyuki Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.

Original languageEnglish
Title of host publication26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479957293
DOIs
Publication statusPublished - 2014 Jan 1
Event26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier, France
Duration: 2014 May 112014 May 15

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
CountryFrance
CityMontpellier
Period14/5/1114/5/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Matsumoto, A., Takei, Y., Matsushita, A., Akahane, K., Matsushima, Y., & Utaka, K. (2014). Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 [6880561] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2014.6880561