Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices

Atsushi Matsumoto; Yuki Takei; Asuka Matsushita; Kouichi Akahane; Yuichi Matsushima; Katsuyuki Utaka

doi:10.1109/ICIPRM.2014.6880561

Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices

Atsushi Matsumoto, Yuki Takei, Asuka Matsushita, Kouichi Akahane, Yuichi Matsushima, Katsuyuki Utaka

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.

Original language	English
Title of host publication	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479957293
DOIs	https://doi.org/10.1109/ICIPRM.2014.6880561
Publication status	Published - 2014
Event	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier, France Duration: 2014 May 11 → 2014 May 15

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Country/Territory	France
City	Montpellier
Period	14/5/11 → 14/5/15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/ICIPRM.2014.6880561

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Matsumoto, A., Takei, Y., Matsushita, A., Akahane, K., Matsushima, Y., & Utaka, K. (2014). Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 [6880561] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2014.6880561

Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. / Matsumoto, Atsushi; Takei, Yuki; Matsushita, Asuka et al.

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6880561 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsumoto, A, Takei, Y, Matsushita, A, Akahane, K, Matsushima, Y & Utaka, K 2014, Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. in 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014., 6880561, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Institute of Electrical and Electronics Engineers Inc., 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Montpellier, France, 14/5/11. https://doi.org/10.1109/ICIPRM.2014.6880561

Matsumoto A, Takei Y, Matsushita A, Akahane K, Matsushima Y, Utaka K. Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 6880561. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2014.6880561

Matsumoto, Atsushi ; Takei, Yuki ; Matsushita, Asuka et al. / Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

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title = "Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices",

abstract = "We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.",

author = "Atsushi Matsumoto and Yuki Takei and Asuka Matsushita and Kouichi Akahane and Yuichi Matsushima and Katsuyuki Utaka",

note = "Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 ; Conference date: 11-05-2014 Through 15-05-2014",

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AU - Matsushima, Yuichi

AU - Utaka, Katsuyuki

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N2 - We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.

AB - We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.

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Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices

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