Gain spectra in cw InGaN/GaN MQW laser diodes

T. Deguchi, T. Azuhata, T. Sota*, S. Chichibu, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


A systematic study on the optical gain of continuous wave InGaN/GaN multiple quantum well laser diode wafers has been achieved by means of the variable excitation-stripe length (VEL) method. It will be demonstrated that mechanisms producing optical gain may vary according to the degree of fluctuation of InGaN composition in the lateral plane.

Original languageEnglish
Pages (from-to)251-255
Number of pages5
JournalMaterials Science and Engineering B
Issue number1-3
Publication statusPublished - 1997 Dec 18


  • Compositional fluctuation
  • Laser diodes
  • Optical gain

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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