@article{f0107ed711fe4e0c85aba957a3a36aa1,
title = "Gain spectra in cw InGaN/GaN MQW laser diodes",
abstract = "A systematic study on the optical gain of continuous wave InGaN/GaN multiple quantum well laser diode wafers has been achieved by means of the variable excitation-stripe length (VEL) method. It will be demonstrated that mechanisms producing optical gain may vary according to the degree of fluctuation of InGaN composition in the lateral plane.",
keywords = "Compositional fluctuation, Laser diodes, Optical gain",
author = "T. Deguchi and T. Azuhata and T. Sota and S. Chichibu and S. Nakamura",
note = "Funding Information: The authors are grateful to Professors K. Suzuki and Y. Horikoshi and Dr T. Uenoyama for stimulating discussions. Professors H. Nakanishi and H. Ikoma are acknowledged for continuous encouragements. They are also grateful to K. Torii, K. Toshikawa, T. Mizutani, M. Arita, M. Sugiyama for their help with experimental studies. The work at Waseda University was supported in part by Seki Science and Technology Foundation, by the Japan Society for the Promotion of Science (Research for the Future Program JSPS-RFTF96P00103) and by the Ministry of Education, Science, Sports and Culture of Japan (Grant No.08874026 and High-Tech Research Center Project).",
year = "1997",
month = dec,
day = "18",
doi = "10.1016/S0921-5107(97)00186-4",
language = "English",
volume = "50",
pages = "251--255",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",
}