Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes

T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, M. Arita, H. Nakanishi, S. Nakamura

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.

Original languageEnglish
Pages (from-to)97-101
Number of pages5
JournalSemiconductor Science and Technology
Volume13
Issue number1
DOIs
Publication statusPublished - 1998 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Deguchi, T., Azuhata, T., Sota, T., Chichibu, S., Arita, M., Nakanishi, H., & Nakamura, S. (1998). Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes. Semiconductor Science and Technology, 13(1), 97-101. https://doi.org/10.1088/0268-1242/13/1/015