GaN lateral overgrowth by hydride vapor phase epitaxy through nanometer-size channels fabricated with nanoimprint lithography

Akira Usui, Toshiharu Matsueda, Hiroki Goto, Haruo Sunakawa, Yasuharu Fujiyama, Yujiro Ishihara, Akiko Okada, Shuichi Shoji, Atsushi A. Yamaguchi, Hiromi Nishihara, Hidetoshi Shinohara, Hiroshi Goto, Jun Mizuno

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Epitaxial lateral overgrowth (ELO) has been used for reducing the dislocation density to grow high-quality GaN crystals. In conventional ELO, micrometer-size channels formed on a mask material such as SiO2, where GaN growth starts, are generally used. In the present study, ELO through nanometer-size (50-80 nm) channels is investigated to improve the dislocation reduction ability. Channels are fabricated using nanoimprint lithography and dry etching. We demonstrate for the first time successful hydride vapor phase epitaxy (HVPE)-based GaN ELO growth through nanochannels. In the growth interface, distinct facet structures appear and coalescence between neighboring facets proceeds. The surface of a 20-μm-thick GaN layer becomes flat by the valleys between facet structures being buried. The dislocation density is shown to decrease to approximately 5 × 107 cm-2 for a 20-μm-thick GaN layer on sapphire. Photoluminescence measurements show a decay time of over 3 times longer than that of a conventional metalorganic chemical vapor deposition (MOCVD) template.

Original languageEnglish
Article number08JB02
JournalJapanese journal of applied physics
Volume52
Issue number8 PART 2
DOIs
Publication statusPublished - 2013 Aug 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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