TY - GEN
T1 - GaN on h-BN technology for release and transfer of nitride devices
AU - Hiroki, Masanobu
AU - Kumakura, Kazuhide
AU - Kobayashi, Yasuyuki
AU - Akasaka, Tetsuya
AU - Yamamoto, Hideki
AU - Makimoto, Toshiki
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.
AB - We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.
UR - http://www.scopus.com/inward/record.url?scp=84906976165&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906976165&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D.2014.6886170
DO - 10.1109/LTB-3D.2014.6886170
M3 - Conference contribution
AN - SCOPUS:84906976165
SN - 9781479952618
T3 - Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
BT - Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
PB - IEEE Computer Society
T2 - 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
Y2 - 15 July 2014 through 16 July 2014
ER -