GaN on h-BN technology for release and transfer of nitride devices

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.

    Original languageEnglish
    Title of host publicationProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
    PublisherIEEE Computer Society
    Pages31
    Number of pages1
    ISBN (Print)9781479952618
    DOIs
    Publication statusPublished - 2014
    Event2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo
    Duration: 2014 Jul 152014 Jul 16

    Other

    Other2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
    CityTokyo
    Period14/7/1514/7/16

    Fingerprint

    Indium
    Aluminum Oxide
    Light emission
    High electron mobility transistors
    Heat losses
    Sapphire
    Nitrides
    Light emitting diodes
    Copper
    Heating
    Degradation
    Substrates

    ASJC Scopus subject areas

    • Filtration and Separation

    Cite this

    Hiroki, M., Kumakura, K., Kobayashi, Y., Akasaka, T., Yamamoto, H., & Makimoto, T. (2014). GaN on h-BN technology for release and transfer of nitride devices. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 (pp. 31). [6886170] IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886170

    GaN on h-BN technology for release and transfer of nitride devices. / Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Yamamoto, Hideki; Makimoto, Toshiki.

    Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. p. 31 6886170.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Hiroki, M, Kumakura, K, Kobayashi, Y, Akasaka, T, Yamamoto, H & Makimoto, T 2014, GaN on h-BN technology for release and transfer of nitride devices. in Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014., 6886170, IEEE Computer Society, pp. 31, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, 14/7/15. https://doi.org/10.1109/LTB-3D.2014.6886170
    Hiroki M, Kumakura K, Kobayashi Y, Akasaka T, Yamamoto H, Makimoto T. GaN on h-BN technology for release and transfer of nitride devices. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society. 2014. p. 31. 6886170 https://doi.org/10.1109/LTB-3D.2014.6886170
    Hiroki, Masanobu ; Kumakura, Kazuhide ; Kobayashi, Yasuyuki ; Akasaka, Tetsuya ; Yamamoto, Hideki ; Makimoto, Toshiki. / GaN on h-BN technology for release and transfer of nitride devices. Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. pp. 31
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