GaN on h-BN technology for release and transfer of nitride devices

Masanobu Hiroki; Kazuhide Kumakura; Yasuyuki Kobayashi; Tetsuya Akasaka; Hideki Yamamoto; Toshiki Makimoto

doi:10.1109/LTB-3D.2014.6886170

GaN on h-BN technology for release and transfer of nitride devices

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.

Original language	English
Title of host publication	Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
Publisher	IEEE Computer Society
Number of pages	1
ISBN (Print)	9781479952618
DOIs	https://doi.org/10.1109/LTB-3D.2014.6886170
Publication status	Published - 2014 Jan 1
Event	2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo, Japan Duration: 2014 Jul 15 → 2014 Jul 16

Publication series

Name	Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Conference

Conference	2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
Country	Japan
City	Tokyo
Period	14/7/15 → 14/7/16

ASJC Scopus subject areas

Filtration and Separation

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10.1109/LTB-3D.2014.6886170

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Hiroki, M., Kumakura, K., Kobayashi, Y., Akasaka, T., Yamamoto, H., & Makimoto, T. (2014). GaN on h-BN technology for release and transfer of nitride devices. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 [6886170] (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886170

GaN on h-BN technology for release and transfer of nitride devices. / Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Yamamoto, Hideki; Makimoto, Toshiki.

Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. 6886170 (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hiroki, M, Kumakura, K, Kobayashi, Y, Akasaka, T, Yamamoto, H & Makimoto, T 2014, GaN on h-BN technology for release and transfer of nitride devices. in Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014., 6886170, Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, IEEE Computer Society, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan, 14/7/15. https://doi.org/10.1109/LTB-3D.2014.6886170

Hiroki M, Kumakura K, Kobayashi Y, Akasaka T, Yamamoto H, Makimoto T. GaN on h-BN technology for release and transfer of nitride devices. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society. 2014. 6886170. (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). https://doi.org/10.1109/LTB-3D.2014.6886170

Hiroki, Masanobu ; Kumakura, Kazuhide ; Kobayashi, Yasuyuki ; Akasaka, Tetsuya ; Yamamoto, Hideki ; Makimoto, Toshiki. / GaN on h-BN technology for release and transfer of nitride devices. Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014).

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AB - We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.

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GaN on h-BN technology for release and transfer of nitride devices

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