GaN on h-BN technology for release and transfer of nitride devices

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.

Original languageEnglish
Title of host publicationProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
PublisherIEEE Computer Society
Number of pages1
ISBN (Print)9781479952618
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo, Japan
Duration: 2014 Jul 152014 Jul 16

Publication series

NameProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Conference

Conference2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
CountryJapan
CityTokyo
Period14/7/1514/7/16

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ASJC Scopus subject areas

  • Filtration and Separation

Cite this

Hiroki, M., Kumakura, K., Kobayashi, Y., Akasaka, T., Yamamoto, H., & Makimoto, T. (2014). GaN on h-BN technology for release and transfer of nitride devices. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 [6886170] (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886170