GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off

Fengwen Mu, Yuki Morino, Kathleen Jerchel, Masahisa Fujino, Tadatomo Suga

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Room temperature GaN-Si direct wafer bonding was done by surface activated bonding (SAB). At first, a feasibility study using GaN template has been done. Then, crystal-face dependence of the bonding results for freestanding GaN substrate has been investigated between Ga-face and N-face. The results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy and larger bonded area. This difference should be caused by their different surface roughnesses after chemical-mechanical polishing (CMP). Besides, both of the structure and composition of the two kinds of interfaces were investigated to understand the bonding mechanisms. The phenomenon of Ga-enrichment during surface activation and Ga-diffusion into Si at room temperature for both Ga-face bonding and N-face bonding has been confirmed.

Original languageEnglish
Pages (from-to)1007-1012
Number of pages6
JournalApplied Surface Science
Volume416
DOIs
Publication statusPublished - 2017 Sep 15
Externally publishedYes

Keywords

  • Bonding interface
  • Direct wafer bonding
  • Epitaxial lift off
  • Ga-enrichment
  • GaN-Si
  • Room temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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