GaN-SiC and GaN-diamond integration via room temperature bonding

Fengwen Mu, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the room temperature bonding of GaN-SiC and GaN-diamond were achieved by surface activated bonding (SAB) methods. Both of the structure and composition of the bonding interfaces were investigated to understand the bonding mechanisms. The results indicate that SAB methods have a great potential for the integration of GaN onto SiC and diamond substrates with a high thermal conductivity.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May 1
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

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ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mu, F., & Suga, T. (2019). GaN-SiC and GaN-diamond integration via room temperature bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735398] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735398