GaN X-band 43% internally-matched FET with 60W output power

M. Kimura; K. Yamauchi; K. Yamanaka; H. Noto; E. Kuwata; H. Otsuka; A. Inoue; Y. Kamo; M. Miyazaki

doi:10.1109/APMC.2008.4957911

GaN X-band 43% internally-matched FET with 60W output power

M. Kimura^*, K. Yamauchi, K. Yamanaka, H. Noto, E. Kuwata, H. Otsuka, A. Inoue, Y. Kamo, M. Miyazaki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

An X-band high efficiency GaN internally-matched FET has been developed. Asymmetric matching circuit layout is employed to avoid decrease of efficiency caused by impedance mismatch and unbalance power dividing in matching circuits. The designed asymmetric input and output matching circuits have achieved equal dividing characteristics. A power added efficiency (PAE) of 43.4% and an output power of 47.8dBm (60.3W) have been achieved with the developed GaN internally-matched FET.

Original language	English
Title of host publication	Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008
DOIs	https://doi.org/10.1109/APMC.2008.4957911
Publication status	Published - 2008
Externally published	Yes
Event	2008 Asia Pacific Microwave Conference, APMC 2008 - Hong Kong, China Duration: 2008 Dec 16 → 2008 Dec 20

Publication series

Name	Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008

Conference

Conference	2008 Asia Pacific Microwave Conference, APMC 2008
Country/Territory	China
City	Hong Kong
Period	08/12/16 → 08/12/20

Keywords

GaN HEMT
Power added efficiency
Power amplifier

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/APMC.2008.4957911

Cite this

Kimura, M, Yamauchi, K, Yamanaka, K, Noto, H, Kuwata, E, Otsuka, H, Inoue, A, Kamo, Y & Miyazaki, M 2008, GaN X-band 43% internally-matched FET with 60W output power. in Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008., 4957911, Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008, 2008 Asia Pacific Microwave Conference, APMC 2008, Hong Kong, China, 08/12/16. https://doi.org/10.1109/APMC.2008.4957911

@inproceedings{9eaac6675a514e599179c7a4a20d437d,

title = "GaN X-band 43% internally-matched FET with 60W output power",

abstract = "An X-band high efficiency GaN internally-matched FET has been developed. Asymmetric matching circuit layout is employed to avoid decrease of efficiency caused by impedance mismatch and unbalance power dividing in matching circuits. The designed asymmetric input and output matching circuits have achieved equal dividing characteristics. A power added efficiency (PAE) of 43.4% and an output power of 47.8dBm (60.3W) have been achieved with the developed GaN internally-matched FET.",

keywords = "GaN HEMT, Power added efficiency, Power amplifier",

author = "M. Kimura and K. Yamauchi and K. Yamanaka and H. Noto and E. Kuwata and H. Otsuka and A. Inoue and Y. Kamo and M. Miyazaki",

year = "2008",

doi = "10.1109/APMC.2008.4957911",

language = "English",

isbn = "9781424426423",

series = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",

booktitle = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",

note = "2008 Asia Pacific Microwave Conference, APMC 2008 ; Conference date: 16-12-2008 Through 20-12-2008",

}

TY - GEN

T1 - GaN X-band 43% internally-matched FET with 60W output power

AU - Kimura, M.

AU - Yamauchi, K.

AU - Yamanaka, K.

AU - Noto, H.

AU - Kuwata, E.

AU - Otsuka, H.

AU - Inoue, A.

AU - Kamo, Y.

AU - Miyazaki, M.

PY - 2008

Y1 - 2008

N2 - An X-band high efficiency GaN internally-matched FET has been developed. Asymmetric matching circuit layout is employed to avoid decrease of efficiency caused by impedance mismatch and unbalance power dividing in matching circuits. The designed asymmetric input and output matching circuits have achieved equal dividing characteristics. A power added efficiency (PAE) of 43.4% and an output power of 47.8dBm (60.3W) have been achieved with the developed GaN internally-matched FET.

AB - An X-band high efficiency GaN internally-matched FET has been developed. Asymmetric matching circuit layout is employed to avoid decrease of efficiency caused by impedance mismatch and unbalance power dividing in matching circuits. The designed asymmetric input and output matching circuits have achieved equal dividing characteristics. A power added efficiency (PAE) of 43.4% and an output power of 47.8dBm (60.3W) have been achieved with the developed GaN internally-matched FET.

KW - GaN HEMT

KW - Power added efficiency

KW - Power amplifier

UR - http://www.scopus.com/inward/record.url?scp=69649100088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69649100088&partnerID=8YFLogxK

U2 - 10.1109/APMC.2008.4957911

DO - 10.1109/APMC.2008.4957911

M3 - Conference contribution

AN - SCOPUS:69649100088

SN - 9781424426423

T3 - Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008

BT - Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008

T2 - 2008 Asia Pacific Microwave Conference, APMC 2008

Y2 - 16 December 2008 through 20 December 2008

ER -

GaN X-band 43% internally-matched FET with 60W output power

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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