Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 μm InGaAs/InGaP strained quantum well lasers

M. Usami, Yuichi Matsushima, Y. Takahashi

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Abstract

GaAs/InGaP superlattices (SLs) grown by gas-source molecular beam epitaxy (GS-MBE) were studied with respect to interface roughness and optical quality. Atomically flat interfaces were obtained at a growth temperature of 460°C by an optimum gas change sequence in which the exposure time of the group-V prior to the growth resumption was as short as 3 s. A GaAs/InGaP SL was introduced into an optical confinement layer (OCL) of a 0.98 μm InGaAs/InGaP strained quantum well laser. Decrease of the threshold current and increase of the slope efficiency were confirmed, which may be due to modifying the equivalent refractive index profile owing to the GaAs/InGaP SL-OCLs. Moreover, the characteristic temperature T0 at around room temperature (RT) was increased to 300 K.

Original languageEnglish
Pages (from-to)1344-1349
Number of pages6
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 2
Publication statusPublished - 1995 May 1
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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