Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 μm InGaAs/InGaP strained quantum well lasers

M. Usami, Yuichi Matsushima, Y. Takahashi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

GaAs/InGaP superlattices (SLs) grown by gas-source molecular beam epitaxy (GS-MBE) were studied with respect to interface roughness and optical quality. Atomically flat interfaces were obtained at a growth temperature of 460°C by an optimum gas change sequence in which the exposure time of the group-V prior to the growth resumption was as short as 3 s. A GaAs/InGaP SL was introduced into an optical confinement layer (OCL) of a 0.98 μm InGaAs/InGaP strained quantum well laser. Decrease of the threshold current and increase of the slope efficiency were confirmed, which may be due to modifying the equivalent refractive index profile owing to the GaAs/InGaP SL-OCLs. Moreover, the characteristic temperature T0 at around room temperature (RT) was increased to 300 K.

Original languageEnglish
Pages (from-to)1344-1349
Number of pages6
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 2
Publication statusPublished - 1995 May 1
Externally publishedYes

Fingerprint

Gas source molecular beam epitaxy
Quantum well lasers
quantum well lasers
molecular beam epitaxy
Superlattices
Growth temperature
threshold currents
gases
superlattices
Refractive index
roughness
Surface roughness
refractivity
slopes
Temperature
temperature
room temperature
profiles
Gases
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 μm InGaAs/InGaP strained quantum well lasers. / Usami, M.; Matsushima, Yuichi; Takahashi, Y.

In: Journal of Crystal Growth, Vol. 150, No. 1 -4 pt 2, 01.05.1995, p. 1344-1349.

Research output: Contribution to journalArticle

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abstract = "GaAs/InGaP superlattices (SLs) grown by gas-source molecular beam epitaxy (GS-MBE) were studied with respect to interface roughness and optical quality. Atomically flat interfaces were obtained at a growth temperature of 460°C by an optimum gas change sequence in which the exposure time of the group-V prior to the growth resumption was as short as 3 s. A GaAs/InGaP SL was introduced into an optical confinement layer (OCL) of a 0.98 μm InGaAs/InGaP strained quantum well laser. Decrease of the threshold current and increase of the slope efficiency were confirmed, which may be due to modifying the equivalent refractive index profile owing to the GaAs/InGaP SL-OCLs. Moreover, the characteristic temperature T0 at around room temperature (RT) was increased to 300 K.",
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