Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination

M. Kasu, K. Ueda, Y. Yamauchi, Toshiki Makimoto

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The radio-frequency characteristics of p -type diamond field-effect transistors with hydrogen surface termination were numerically analyzed using an equivalent-circuit model. From the gate-source capacitance (CGS) -voltage (VGS) results extracted from measured s parameters, the authors found a plateau in CGS within a certain VGS range. This means that a two-dimensional hole gas channel forms parallel to the surface and that the channel is separated by a thin energy-barrier layer with an infinite height from the gate metal. At a high negative VGS, as negative VGS is increased, CGS increases steeply. This results from holes penetrating the energy barrier.

Original languageEnglish
Article number043509
JournalApplied Physics Letters
Volume90
Issue number4
DOIs
Publication statusPublished - 2007
Externally publishedYes

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capacitance-voltage characteristics
field effect transistors
diamonds
hydrogen
barrier layers
equivalent circuits
plateaus
radio frequencies
capacitance
energy
electric potential
gases
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination. / Kasu, M.; Ueda, K.; Yamauchi, Y.; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 90, No. 4, 043509, 2007.

Research output: Contribution to journalArticle

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