Advanced gate electrode engineering is demonstrated to overcome the key issues of dual gate CMOS with thin gate oxide film. Using the small-grain-size polysilicon for the gate electrode, not only the suppression of gate depletion but also the stability of threshold voltage can be achieved as well as the improvement of the gate oxide integrity. Furthermore this successful implementation into 0.18 μm in CMOS is demonstrated with high performance and high reliability.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1997 Jan 1|
|Event||Proceedings of the 1997 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 1997 Jun 10 → 1997 Jun 12
ASJC Scopus subject areas
- Electrical and Electronic Engineering