Advanced gate electrode engineering is demonstrated to overcome the key issues of dual gate CMOS with thin gate oxide film. Using the small-grain-size polysilicon for the gate electrode, not only the suppression of gate depletion but also the stability of threshold voltage can be achieved as well as the improvement of the gate oxide integrity. Furthermore this successful implementation into 0.18 μm in CMOS is demonstrated with high performance and high reliability.
|Number of pages||2|
|Publication status||Published - 1997|
ASJC Scopus subject areas
- Electrical and Electronic Engineering