Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

Makoto Kasu*, Kenji Ueda, Hiroyuki Kageshima, Yoshiharu Yamauchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


Cross-sectional transmission microscopy images of hydrogen-terminated diamond field-effect transistor reveal interfacial layers between the metal and hydrogen-terminated diamond layer. Especially interesting is that an interfacial layer between Al and H-terminated diamond is clearly seen. This layer corresponds to the energy barrier, which we confirmed from an RF analysis of a diamond FET. During growth, an amorphous-like subsurface layer with vacancies has already formed on H-terminated diamond, and during subsequent metal evaporation, metal diffuses through vacancies into the subsurface layer, and eventually the interfacial layer forms.

Original languageEnglish
Pages (from-to)741-744
Number of pages4
JournalDiamond and Related Materials
Issue number4-5
Publication statusPublished - 2008 Apr
Externally publishedYes


  • Diamond film
  • Diffusion
  • High-resolution electron microscopy
  • Hydrogen-termination
  • Interface structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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