TY - JOUR
T1 - Gate interfacial layer in hydrogen-terminated diamond field-effect transistors
AU - Kasu, Makoto
AU - Ueda, Kenji
AU - Kageshima, Hiroyuki
AU - Yamauchi, Yoshiharu
N1 - Funding Information:
The authors would like to thank Mr. S. Mizuno, T. Mitate of NTT Advanced Technology for their TEM observation, and Dr. T. Makimoto, K. Torimitsu for their encouragement. They owe special thanks to Prof. E. Kohn at the University of Ulm, Germany, for his continuous advice. This work was partly supported by the SCOPE project, “Diamond transistors for RF power amplifiers in microwave wireless communications”, from the Ministry of Internal Affairs and Communications, Japan.
PY - 2008/4
Y1 - 2008/4
N2 - Cross-sectional transmission microscopy images of hydrogen-terminated diamond field-effect transistor reveal interfacial layers between the metal and hydrogen-terminated diamond layer. Especially interesting is that an interfacial layer between Al and H-terminated diamond is clearly seen. This layer corresponds to the energy barrier, which we confirmed from an RF analysis of a diamond FET. During growth, an amorphous-like subsurface layer with vacancies has already formed on H-terminated diamond, and during subsequent metal evaporation, metal diffuses through vacancies into the subsurface layer, and eventually the interfacial layer forms.
AB - Cross-sectional transmission microscopy images of hydrogen-terminated diamond field-effect transistor reveal interfacial layers between the metal and hydrogen-terminated diamond layer. Especially interesting is that an interfacial layer between Al and H-terminated diamond is clearly seen. This layer corresponds to the energy barrier, which we confirmed from an RF analysis of a diamond FET. During growth, an amorphous-like subsurface layer with vacancies has already formed on H-terminated diamond, and during subsequent metal evaporation, metal diffuses through vacancies into the subsurface layer, and eventually the interfacial layer forms.
KW - Diamond film
KW - Diffusion
KW - High-resolution electron microscopy
KW - Hydrogen-termination
KW - Interface structure
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U2 - 10.1016/j.diamond.2007.12.022
DO - 10.1016/j.diamond.2007.12.022
M3 - Article
AN - SCOPUS:42949123168
SN - 0925-9635
VL - 17
SP - 741
EP - 744
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 4-5
ER -