GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

Simona Achilli*, Nicola Manini, Giovanni Onida, Takahiro Shinada, Takashi Tanii, Enrico Prati

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.

Original languageEnglish
Article number18054
JournalScientific reports
Issue number1
Publication statusPublished - 2018 Dec 1

ASJC Scopus subject areas

  • General


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