GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

Simona Achilli, Nicola Manini, Giovanni Onida, Takahiro Shinada, Takashi Tanii, Enrico Prati

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.

    Original languageEnglish
    Article number18054
    JournalScientific Reports
    Volume8
    Issue number1
    DOIs
    Publication statusPublished - 2018 Dec 1

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    Germanium
    Silicon
    Equipment and Supplies
    Temperature

    ASJC Scopus subject areas

    • General

    Cite this

    GeVn complexes for silicon-based room-temperature single-atom nanoelectronics. / Achilli, Simona; Manini, Nicola; Onida, Giovanni; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico.

    In: Scientific Reports, Vol. 8, No. 1, 18054, 01.12.2018.

    Research output: Contribution to journalArticle

    Achilli, Simona ; Manini, Nicola ; Onida, Giovanni ; Shinada, Takahiro ; Tanii, Takashi ; Prati, Enrico. / GeVn complexes for silicon-based room-temperature single-atom nanoelectronics. In: Scientific Reports. 2018 ; Vol. 8, No. 1.
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