Gigahertz acoustic wave velocity measurement in GaN single crystals considering acousto-electric effect

Hayato Ichihashi, Takahiko Yanagitani, Shinji Takayanagi, Masahiko Kawabe, Mami Matsukawa

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Abstract

The resistivity¿frequency characteristics of longitudinal wave velocities propagating parallel to the c-axis in a GaN single crystal were theoretically estimated by considering the piezoelectric acousto-electric effect. The temperature and frequency dependences of longitudinal and shear wave velocities in conductive and semiconductive GaN single-crystal samples were experimentally investigated by Brillouin scattering. The temperature dependence of longitudinal and shear wave velocities had a linear tendency in the conductive sample, whereas in the semiconductive sample, those had a similar tendency to the predicted velocity changes resulting from the piezoelectric stiffening effect. However, the temperature dependence of shear wave velocity, which does not possess piezoelectric coupling, had a tendency similar to that of the longitudinal wave in the semiconductive sample, unexpectedly. The frequency dependence of longitudinal wave velocities in the semiconductive sample had a tendency similar to the predicted velocity changes resulting from the piezoelectric stiffening effect.

Original languageEnglish
Article number6863851
Pages (from-to)1307-1313
Number of pages7
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume61
Issue number8
DOIs
Publication statusPublished - 2014 Aug

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ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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