TY - JOUR
T1 - Graphene layer formation on polycrystalline nickel grown by chemical vapor deposition
AU - Kanzaki, Kenichi
AU - Hibino, Hiroki
AU - Makimoto, Toshiki
PY - 2013/3
Y1 - 2013/3
N2 - We studied the structure of graphene layers grown by chemical vapor deposition on polycrystalline nickel. The conditions of the polycrystalline nickel catalyst (size of fine crystals and surface roughness) were controlled by cyclic heating and cooling, and its effect on the graphene layer formation was evaluated. By increasing the average size of the nickel fine crystals and thereby increasing of the surface roughness, nonuniformity of the graphene sheet numbers tends to increase. A marked change in graphene sheet number tends to occur at discontinuities in the polycrystalline nickel surfaces. From the structural analysis, the graphene layer is found to be made up of single or multiple crystal graphene thin films with different crystallographic directions. The size of each thin film is independent of and not restricted by the size of the nickel fine crystals, and a certain thin film passes over the discontinuities.
AB - We studied the structure of graphene layers grown by chemical vapor deposition on polycrystalline nickel. The conditions of the polycrystalline nickel catalyst (size of fine crystals and surface roughness) were controlled by cyclic heating and cooling, and its effect on the graphene layer formation was evaluated. By increasing the average size of the nickel fine crystals and thereby increasing of the surface roughness, nonuniformity of the graphene sheet numbers tends to increase. A marked change in graphene sheet number tends to occur at discontinuities in the polycrystalline nickel surfaces. From the structural analysis, the graphene layer is found to be made up of single or multiple crystal graphene thin films with different crystallographic directions. The size of each thin film is independent of and not restricted by the size of the nickel fine crystals, and a certain thin film passes over the discontinuities.
UR - http://www.scopus.com/inward/record.url?scp=84875538669&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875538669&partnerID=8YFLogxK
U2 - 10.7567/JJAP.52.035103
DO - 10.7567/JJAP.52.035103
M3 - Article
AN - SCOPUS:84875538669
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 3 PART 1
M1 - 035103
ER -